Hostname: page-component-5c6d5d7d68-ckgrl Total loading time: 0 Render date: 2024-08-16T02:56:48.605Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic Layer Epitaxy of Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  26 February 2011

M. Pessa ,
J. Lilja ,
O. Jylhä ,
M. Ishiko  and
H. Asonen
M. Pessa
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
J. Lilja
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
O. Jylhä
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
M. Ishiko
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
H. Asonen
Affiliation:
Department of Physics, Tampere University of TechnologyP.O. Box 527, SF-33101 Tampere, Finland
Get access

Abstract

At the time being, there is evidently a sharp increase of interest in growth of low-dimensional thin-film structures of semiconducting compounds by the Atomic Layer Epitaxy (ALE) method. Many of the wide-gap II-VI compounds can be grown from elemental source materials by an ALE mode related to Molecular Beam Epitaxy (MBE). This paper concentrates on recent ALE work involving ZnSe- and CdTe- derived diluted magnetic semiconductors (DMS) where a fraction of Zn or Cd is substituted by Mn atoms. It shows that Zn1-xMnxSe/ZnSe and Cd1-xMnxTe/CdTe DMS structures with abrupt interfaces and high structural perfection can be produced at low growth temperatures by the ALE method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 303
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Goodman, C.H. L and Pessa, M., J. Appl. Phys. 60, R65 (1986)Google Scholar
2. Suntola, T. and Hyvärinen, J., Ann. Rev. Mater. Sci. 15, 177 (1985)Google Scholar
3. Pessa, M., Jylhä, O. and Herman, M. A., J. Crystal Growth 67, 255 (1984)CrossRefGoogle Scholar
4. Herman, M. A., Vulli, M. and Pessa, M., J. Crystal Growth 73, 403 (1985)CrossRefGoogle Scholar
5. Herman, M. A., Jylhä, O. and Pessa, M., Cryst. Res. Technol. 21, 841 (1986) and Cryst. Res. Technol. 21, 969 (1986)CrossRefGoogle Scholar
6. Pakkanen, T., Lindblad, M. and Nevalainen, V., in The Extended Abstracts of The First Symposium on Atomic Layer Epitaxy, Espoo, Finland, 1984, p. 14 Google Scholar
7. Herman, M. A., Jylhä, O. and Pessa, M., J. Crystal Growth 66, 480 (1984)Google Scholar
8. Pessa, M. and Jylhä, O., Appl. Phys. Lett. 45, 646 (1984)Google Scholar
9. Yao, T. and Takeda, T., Appl. Phys. Lett. 48, 160 (1986)Google Scholar
10. Yao, T., Takeda, T. and Watanuki, R., Appl Phys. Lett. 48, 1615 (1986); T. Takeda, T. Kurosu, M. Lida and T. Yao, Surf. Sci. 174, 548 (1986); T. Yao, Jap. J. Appl. Phys. 25, L942 (1986)CrossRefGoogle Scholar
11. Pessa, M., in Abstracts of The MRS 1986 Fall Meeting, Boston, USA, p. 632Google Scholar
12. Nishizawa, J., Abe, H. and Kurabayashi, T., J. Electrochem. Soc., 132, 1197 (1985); J. Nishizawa, H. Abe, T. Kurabayashi and N. Sakuri, J. Vac. Sci. Technol. A 4, 706 1986); J. Nishizawa and T. Kurabayashi, J. Cryst. Soc. Japan 28, 133 (1986)Google Scholar
13. Bedair, S.M., Tischler, M.A., Katsuyama, T. and EI-Masry, N.A., Appl. Phys. Lett. 47, 51 (1985)Google Scholar
14. Tischler, M.A. and Bedair, S.M., Appl. Phys. Lett 48, 1681 (1986)CrossRefGoogle Scholar
15. Doi, A., Aoyagi, Y. and Namba, S., Appl. Phys. Lett. 48, 1787 (1986)Google Scholar
16. Usui, A. and Sunakawa, S., Jap. J. App1 Phys. 25, L212 (1986)Google Scholar
17. Tischler, M.A., Anderson, N.G. and Bedair, S.M., Appl. Phys. Lett. 49, 1199 (1986)CrossRefGoogle Scholar
18. Tischler, M.A. and Bedair, S.M., J. Crystal Growth 77, 89 (1986)Google Scholar
19. Usui, A. and Sunakawa, H., in Proceedings of The 13th Int. Symp. on GaAs and Related Compounds, Las Vegas, 1986 Google Scholar
20. Gaj, J.A., Galazka, R.R. and Nawrochi, M., Solid State Commun. 25, 193 (1978)Google Scholar
21. Furdyna, J.K., J. Appl. Phys. 53, 7637 (1982)Google Scholar
22. Brandt, N.B. and Moshchalkov, V.V., Adv. Phys. 33, 193 (1984)Google Scholar
23. Dobrowolska, M., Witowski, A.M., Furdyna, J.K., Ichiguchi, T., Drew, H.D. and Wolff, P.A., Phys. Rev. B 29, 6652 (1984)Google Scholar
24. Nurmikko, A.V., Gunshor, R.L., and Kolodziejski, L.A., IEEE J. Quantum Eletron. QE–22, 1785 (1986)CrossRefGoogle Scholar
25. Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., Datta, S., Becker, W.M., and Nurmikko, A.V., IEEE J. Quantum Electron. QE–22, 1666 (1986)CrossRefGoogle Scholar
26. Hefetz, Y., Goltsos, W.C., Lee, D., Nurmikko, A.V., Kolodziejski, L.A. and Gunshor, R.L., Superlatt. and Microstr. 2, 455 (1986).Google Scholar
*Permanent address: NEC, 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki, JapanGoogle Scholar