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Atomic Layer Deposition of SrO: Substrate and Temperature Effects

Published online by Cambridge University Press:  03 January 2013

Han Wang ,
Xiaoqiang Jiang  and
Brian G. Willis
Han Wang
Affiliation:
Department of Chemical, Materials & Biomolecular Engineering, University of Connecticut, Storrs, Connecticut 06269.
Xiaoqiang Jiang
Affiliation:
Department of Chemical, Materials & Biomolecular Engineering, University of Connecticut, Storrs, Connecticut 06269.
Brian G. Willis
Affiliation:
Department of Chemical, Materials & Biomolecular Engineering, University of Connecticut, Storrs, Connecticut 06269.
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Abstract

The atomic layer deposition (ALD) of SrO was conducted on various oxide surfaces by using strontium bis(tri-isopropylcyclopentadienyl) and water at deposition temperatures of 200 and 250°C. The initial and steady growth behaviors were studied by in-situ spectroscopic ellipsometry and ex-situ X-ray photoelectron spectroscopy. For initial growth, the growth per cycle (GPC) of SrO not only depends on the concentration of hydroxyl groups but also the formation of interfacial Sr-O-Si bonds. For the steady growth, in-situ annealing was used to enhance the growth rate and multiple growth regions were identified.

Keywords

atomic layer depositionx-ray photoelectron spectroscopy (XPS)thin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 179 - 183
Copyright
Copyright © Materials Research Society 2012 

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References

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