Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-55wx7 Total loading time: 0.33 Render date: 2021-03-05T23:24:21.653Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

a-SiC:H Doped with Reactive Gases and with Ion Implantation

Published online by Cambridge University Press:  21 February 2011

F. Demichelis
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
C. F. Pirri
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
E. Tresso
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
G. Della Mea
Affiliation:
Laboratori INFN - Via Romea 4, Legnaro e Unita' INFM Padova, Italy
V. Rigato
Affiliation:
Laboratori INFN - Via Romea 4, Legnaro e Unita' INFM Padova, Italy
P. Rava
Affiliation:
Elettrorava - Via Don Sapino 120, Savonera Torino, Italy
G. Amato
Affiliation:
I.E.N.G. Ferraris - Str. delle Cacce 35, Torino, Italy
Get access

Abstract

Boron doped a-SiC:H samples have been obtained both by gas phase doping during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by ion implantation and to produce a dopant diffusion. Physical properties deduced by optical, electrical and structural characterization of the two sets of samples have been compared. Ion implantation technique allows a better control of the dopant dose but increases the compositional disorder and the obtained conductivity values are one order of magnitude lower than those of gas doped samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below.

References

1) Ray, S., Ganguly, G. and Barna, A.K. - Jap. Journ. Appl. Phys. 28, 1776, (1989)Google Scholar
2) Kuwano, Y. and Tsuda, S. - Springer Proceedings in Physics Vol. 34Amorphous and Crystalline Silicon CarbideSpringer Verlag New York, Berlin, Heidelberg p. 167, (1989)CrossRefGoogle Scholar
3) Ziegler, J.F., Biersack, J.P. and Littmark, U., The Stopping and Ranges of Ions in Matter, vol. 1, ed. Ziegler, J.F. (Pergamon Press, New York (1985).Google Scholar
4) Demichelis, F., Kaniadakis, G., Tagliaferro, A., Tresso, E. - Appl. Opt. 26, 1737 (1987).CrossRefGoogle Scholar
5) Madan, A. and Shaw, M.P. - “The Physics and Application of Amorphous SemiconductorsAcademic Press, Inc. (London) p. 122, (1988)Google Scholar
6) Tsai, C.C. - Phys. Rev. B 19, 2041 (1972)CrossRefGoogle Scholar
7) Stutzman, M. and Biegelsen, D.K. - Phys. Rev B 28, 6256 (1983).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 4 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 5th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

a-SiC:H Doped with Reactive Gases and with Ion Implantation
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

a-SiC:H Doped with Reactive Gases and with Ion Implantation
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

a-SiC:H Doped with Reactive Gases and with Ion Implantation
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *