Hostname: page-component-7c8c6479df-xxrs7 Total loading time: 0 Render date: 2024-03-29T06:24:52.259Z Has data issue: false hasContentIssue false

a-SiC:H Doped with Reactive Gases and with Ion Implantation

Published online by Cambridge University Press:  21 February 2011

F. Demichelis
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
C. F. Pirri
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
E. Tresso
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
G. Della Mea
Affiliation:
Laboratori INFN - Via Romea 4, Legnaro e Unita' INFM Padova, Italy
V. Rigato
Affiliation:
Laboratori INFN - Via Romea 4, Legnaro e Unita' INFM Padova, Italy
P. Rava
Affiliation:
Elettrorava - Via Don Sapino 120, Savonera Torino, Italy
G. Amato
Affiliation:
I.E.N.G. Ferraris - Str. delle Cacce 35, Torino, Italy
Get access

Abstract

Boron doped a-SiC:H samples have been obtained both by gas phase doping during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by ion implantation and to produce a dopant diffusion. Physical properties deduced by optical, electrical and structural characterization of the two sets of samples have been compared. Ion implantation technique allows a better control of the dopant dose but increases the compositional disorder and the obtained conductivity values are one order of magnitude lower than those of gas doped samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Ray, S., Ganguly, G. and Barna, A.K. - Jap. Journ. Appl. Phys. 28, 1776, (1989)Google Scholar
2) Kuwano, Y. and Tsuda, S. - Springer Proceedings in Physics Vol. 34Amorphous and Crystalline Silicon CarbideSpringer Verlag New York, Berlin, Heidelberg p. 167, (1989)Google Scholar
3) Ziegler, J.F., Biersack, J.P. and Littmark, U., The Stopping and Ranges of Ions in Matter, vol. 1, ed. Ziegler, J.F. (Pergamon Press, New York (1985).Google Scholar
4) Demichelis, F., Kaniadakis, G., Tagliaferro, A., Tresso, E. - Appl. Opt. 26, 1737 (1987).Google Scholar
5) Madan, A. and Shaw, M.P. - “The Physics and Application of Amorphous SemiconductorsAcademic Press, Inc. (London) p. 122, (1988)Google Scholar
6) Tsai, C.C. - Phys. Rev. B 19, 2041 (1972)CrossRefGoogle Scholar
7) Stutzman, M. and Biegelsen, D.K. - Phys. Rev B 28, 6256 (1983).Google Scholar