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Application of SiO2 Films deposited by TICS/O2 PECVD to InSb MISFET

Published online by Cambridge University Press:  10 February 2011

O. Sugiura ,
T. Akiba  and
I. Idris
O. Sugiura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan, osugiura@pe.titech.ac.jp
T. Akiba
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan, osugiura@pe.titech.ac.jp
I. Idris
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan, osugiura@pe.titech.ac.jp
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Abstract

We have fabricated n-channel InSb MISFETs using SiO2 films as gate insulators. The insulator was deposited by PECVD using tetra-isocyanate-silane (TICS) and oxygen (O2) as source gases. Threshold voltage and carrier mobility at 77K were 0.5V and 4200cm2/Vs, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 249
Copyright
Copyright © Materials Research Society 1999

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References

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