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Application of Polysilicon in Advanced IC - Technologies

Published online by Cambridge University Press:  21 February 2011

Herbert Kabza ,
Thomas F. Meister  and
Hans Schaber
Herbert Kabza
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D 8000 Minchen 83, Federal Republic of Germany
Thomas F. Meister
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D 8000 Minchen 83, Federal Republic of Germany
Hans Schaber
Affiliation:
Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D 8000 München 83, Federal Republic of Germany
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Abstract

The progress in IC technology is unthinkable without the extensive use of polysilicon for a wide variety of purposes. These range from simple passive components like resistors and contacts through more complex structures such as recrystallized layers for SOI and 3D techniques, poly-Si filled isolation trenches and electrodes of DRAM capacitors to active device applications, i.e. MOS gates and poly-Si emitters in bipolar transistors. As silicide or in combination with such polysilicon allows practical local interconnects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 247
Copyright
Copyright © Materials Research Society 1990

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