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Annealing Effects of Schottky Contacts on the Characteristics of 4H-SiC Schottky Barrier Diodes

Published online by Cambridge University Press:  10 February 2011

S. C. Kang ,
B. H. Kum ,
S. J. Do ,
J. H. Je  and
M. W. SHIN
S. C. Kang
Affiliation:
Department of Ceramic Materials Engineering, Myong Ji University 38–2 Nam-Dong, Yongin-Si, Kyunggi-Do, Korea 449–728, Phone: 82–335–330–646582–335–33–6457
B. H. Kum
Affiliation:
Department of Ceramic Materials Engineering, Myong Ji University 38–2 Nam-Dong, Yongin-Si, Kyunggi-Do, Korea 449–728, Phone: 82–335–330–646582–335–33–6457
S. J. Do
Affiliation:
Department of Materials Science and Engineering, Pohang Institute of Science and TehnologyP 0. BOX 125, POHANG 790–600, Korea, Tel: 82–562–79–2139, 82–562–79–2399
J. H. Je
Affiliation:
Department of Materials Science and Engineering, Pohang Institute of Science and TehnologyP 0. BOX 125, POHANG 790–600, Korea, Tel: 82–562–79–2139, 82–562–79–2399
M. W. SHIN
Affiliation:
Department of Ceramic Materials Engineering, Myong Ji University 38–2 Nam-Dong, Yongin-Si, Kyunggi-Do, Korea 449–728, Phone: 82–335–330–646582–335–33–6457
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Abstract

This paper reports on the relationship between the microstructure and the device performance of Pt/4H-SiC schottky barrier diodes ( SBDs ). The evolution of microstructure in the metal/SiC interfaces annealed at different temperatures was characterized using X-ray scattering techniques. The reverse characteristics of the devices were degraded with annealing temperatures. The maximum breakdown voltages of as-deposited devices and 850 °C annealed devices are 1300 V and 626 V, respectively. However, the forward characteristics of the devices were found out to improve with annealing temperatures. X-ray scattering analysis showed that Pt-silicides were formed by annealing performed at or higher than 650 °C. The formation of silicides was shown to increase the roughness of the Pt/SiC interface. It is believed that the forward characteristics of the SBDs be strongly dependent on the crystallity of silicides formed in the Pt/SiC interface during the annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 141
Copyright
Copyright © Materials Research Society 1999

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References

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