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Analysis of Residual Stress in Polycrystalline Silver Thin Films by X-Ray Diffraction

Published online by Cambridge University Press:  10 February 2011

T. L. Alford ,
Yuxiao Zeng ,
Y. L. Zou ,
F. Deng ,
S. S. Lau ,
T. Laursen  and
B. Manfred Ullrich
T. L. Alford
Affiliation:
Department of Chemical, Bio and Materials Engineering
Yuxiao Zeng
Affiliation:
Department of Chemical, Bio and Materials Engineering
Y. L. Zou
Affiliation:
Department of Chemical, Bio and Materials Engineering
F. Deng
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093
T. Laursen
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
B. Manfred Ullrich
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
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Abstract

The stress state of evaporated Ag films prepared on Ti underlayers before and after encapsulation process has been studied by x-ray diffraction using a “sin2ψ” technique. A low tensile stress of approximately 61 MPa was measured in the as-deposited Ag films. The stress was caused by nonequilibrium growth during film deposition and resulted in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress was produced by the encapsulation process at 600 °C, but most of this stress relaxed during the cooling stage, and a residual tensile stress of ∼ 320 MPa in the film plane was determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 293
Copyright
Copyright © Materials Research Society 1997

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References

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