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Analysis and Control of the Performance-Limiting Defects in HEM-Grown Silicon for Solar Cells

Published online by Cambridge University Press:  26 February 2011

Chandra P. Khattak ,
Frederick Schmid ,
Michael Cudzinovic ,
Martha Symko  and
Bhushan L. Sopori
Chandra P. Khattak
Affiliation:
Crystal Systems, Inc., 27 Congress Street, Salem, MA 01970–5597
Frederick Schmid
Affiliation:
Crystal Systems, Inc., 27 Congress Street, Salem, MA 01970–5597
Michael Cudzinovic
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401–3393
Martha Symko
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401–3393
Bhushan L. Sopori
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401–3393
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Abstract

Multicrystalline silicon ingots of 55 cm × 55 cm cross section, 100 kg have been grown by the Heat Exchanger Method (HEM). Controlled growth features have been used to produce large grain size, vertically oriented grain boundaries, large areas of twins with low defect density and rejection of impurities to the top of the ingot. Ambient control has reduced C, N, and O concentration and minimized precipitates with no detectable metallic impurities. High performance solar cells have ben fabricated, and further improvements can be achieved by minimizing dislocation tangles and impurities in localized regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 767
Copyright
Copyright © Materials Research Society 1995

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