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An Optical Waveguide Formed by Aluminum Nitride thin film on Sapphire

Published online by Cambridge University Press:  10 February 2011

Xiao Tang
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, 2300 6th Street, NW, Washington, DC 20059, spencer@msrce.howard.edu
Yifang Yuan
Affiliation:
Permanent address: East China University of Technology, 516 Jun Gong Road, Shanghai 200093 China
K. Wongchotigul
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, 2300 6th Street, NW, Washington, DC 20059, spencer@msrce.howard.edu
Michael G. Spencer
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, 2300 6th Street, NW, Washington, DC 20059, spencer@msrce.howard.edu
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Abstract

We have investigated an optical waveguide formed by aluminum nitride (AlN) thin film on sapphire. A good quality AlN thin film on sapphire substrate was prepared by metal organic chemical vapor deposition (MOCVD) in this laboratory. A rutile prism coupler was employed to display the waveguide modes (N-lines) with wavelengths of 632.8, 532.1, 514.5 and 488.0 nm. The refractive index and thickness of the waveguide material is obtained by prism-coupler measurement. The dispersion curve of the AlN film is given and the dispersion equation is derived. The attenuation in the waveguide is evaluated by scattering loss measurements using a fiber probe. The attenuation coefficient alpha (α) is 1.5- 2.1 cm−1 depending on the sample and the different modes of waveguide. The accuracy of the measurement is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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