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An Electron Microscopic Characterization of Mbe-Grown ZnSe/CaAs and ZnSe/Ge Heterointerfaces

Published online by Cambridge University Press:  28 February 2011

S.B. Sant ,
R.W. Smith  and
G.C. Weatherly
S.B. Sant
Affiliation:
uDepartment of Metallurgical Engineering, Queen's University, Kingston, Ontario, Canada K7L 3N6
R.W. Smith
Affiliation:
uDepartment of Metallurgical Engineering, Queen's University, Kingston, Ontario, Canada K7L 3N6
G.C. Weatherly
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S IA4
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Abstract

Molecular beam epitaxy (MBE) grown ZnSe/GaAs and ZnSe/Ge heterointerfaces have been studied by transmission electron microscopy (TEM). Defect characterization of cross-sectional and planar specimens showed that ZnSe epitaxial films contain numerous twins that predominantly arise at the interface. Planar specimens of ZnSe/Ge were in-situ TEM annealed, for 5.5 hours at 873K. The twins are thermally very stable which would indicate that they arise during the growth process. The occurrence of these twins in the ZnSe film is explained by nucleation and growth of normal and twinned nuclei. Some of the ZnSe films grown on (10O)Ge substrates have low-angle boundaries indicating that the initial growth of the film is by the formation of islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 433
Copyright
Copyright © Materials Research Society 1990

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References

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