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Amorphous Ti-Si-N Barrier Metal for Cu Metallization on Ulsis

Published online by Cambridge University Press:  21 February 2011

Tadashi Iijima ,
Yoshiaki Shimooka  and
Kyoichi Suguro
Tadashi Iijima
Affiliation:
ULSI Research Labs. R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Yoshiaki Shimooka
Affiliation:
ULSI Research Labs. R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Kyoichi Suguro
Affiliation:
ULSI Research Labs. R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
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Abstract

We have investigated the physical properties of Ti-Si-N films for future Cu metallization on ULSIs. Our Ti-Si-N films were found to be amorphous by X-ray diffraction measurements. Thermal stability of the amorphous structure was confirmed, even after annealing at 600°C for 30 minutes in an Ar ambient. The atomic composition of the film was identified as Ti:Si:N=1:0.6:1.6 by chemical analysis. The film stress was found to be tensile and 0.3GPa. The electrical resistivity was about 0.5m Ωcm at room temperature.

The effectiveness of the film as a diffusion barrier was evaluated by n+/p and p+/n junction leakage measurements. The junction depth was 0.2Ω m and the contact area was 300×80μ2. No degradation of leakage characteristics was observed for these diodes, even after annealing at 600°C for 30 minutes in an N2/H2 ambient.

These results demonstrate that amorphous Ti-Si-N barrier metal is a promising candidate for application in deep-submicron ULSIs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 459
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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