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Amorphous Silicon Thin Film Transistors and Memory Devices

Published online by Cambridge University Press:  28 February 2011

P.G. Lecomber
P.G. Lecomber*
Affiliation:
Carnegie Laboratory of Physics, University of Dundee, Dundee DDl 4HN, Scotland, U.K.
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Abstract

The preparation of amorphous silicon with a low density of defect states by the glow discharge decomposition of silane and the ability to control its electrical conductivity over many orders of magnitude by the addition of phosphine or diborane to the silane, stimulated a worldwide interest in this material and in its possible applications. This paper begins with a description of the preparation technique and a brief review of some of the important properties of the material. The fabrication and characteristics of a-Si thin-film field effect transistors will be described and followed by a discussion of the applications of these devices in large area liquid crystal displays, in simple logic circuits and in addressable image sensors. Finally, the use of a-Si in memory devices will be briefly described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 341
Copyright
Copyright © Materials Research Society 1985

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