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AES Studies of the M/SiC Interface with Metal Carbide Formers

Published online by Cambridge University Press:  25 February 2011

M. V. Zeller
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556
J. Bellina
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556 St. Mary's College, Notre Dame, IN 46556
N. Saha
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556
J. Filar
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556
J. Hargraeves
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556
H. Will
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556 NASA/Lewis Research Center, Cleveland, OH 44135
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Abstract

After Nichrome, Ni, Cr, and Au/Ta films are deposited onto single crystals of cubic SiC, their reactivities at the metal-semiconductor interface are studied by Auger Electron Spectroscopy. For all metals except Ni, metal carbides are detected at the interfaces. Initially these carbides tend to promote adhesion and limit the reaction with the substrate. Annealing at or above 450°C causes Ni to diffuse into the SiC and the Ta and Cr films to migrate through the capping material and away from the SiC, thereby delaminating. Development of the secondary phases at interface severely complicates the interpretation of the depth profiling data and with the uniformity of the contact film. These phases seem to be initiated at SiC defect sites where the reaction kinetics are considerably different and may be minimized with improved SiC substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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AES Studies of the M/SiC Interface with Metal Carbide Formers
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