Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
Hostname: page-component-559fc8cf4f-55wx7 Total loading time: 0.406 Render date: 2021-03-05T01:56:57.912Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

AES Studies of the M/SiC Interface with Metal Carbide Formers

Published online by Cambridge University Press:  25 February 2011

M. V. Zeller ,
J. Bellina ,
N. Saha ,
J. Filar ,
J. Hargraeves  and
H. Will
M. V. Zeller
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556
J. Bellina
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556 St. Mary's College, Notre Dame, IN 46556
N. Saha
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556
J. Filar
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556
J. Hargraeves
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556
H. Will
Affiliation:
College of Engineering, University of Notre Dame, Notre Dame, IN 46556 NASA/Lewis Research Center, Cleveland, OH 44135
Get access

Abstract

After Nichrome, Ni, Cr, and Au/Ta films are deposited onto single crystals of cubic SiC, their reactivities at the metal-semiconductor interface are studied by Auger Electron Spectroscopy. For all metals except Ni, metal carbides are detected at the interfaces. Initially these carbides tend to promote adhesion and limit the reaction with the substrate. Annealing at or above 450°C causes Ni to diffuse into the SiC and the Ta and Cr films to migrate through the capping material and away from the SiC, thereby delaminating. Development of the secondary phases at interface severely complicates the interpretation of the depth profiling data and with the uniformity of the contact film. These phases seem to be initiated at SiC defect sites where the reaction kinetics are considerably different and may be minimized with improved SiC substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 283
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

1.) Nishino, S., Powell, J.A., and Will, H.A., Appl. Phys. Lett. 42, 460 (1983).CrossRefGoogle Scholar
2.) Parsons, J.D., Bunshah, R.F., and Stafsudd, O.M., Solid State Tech., 133 Nov., 1985 Google Scholar
3.) Bermudez, V.M., Appl. Phys. Lett., 42, 70 (1983).CrossRefGoogle Scholar
4.) Bermudez, V.M., Appl. Surf. Sci., 1–7, 1–2 (1983).Google Scholar
5.) Kaplan, R., Klein, P.J., and Addamiano, A., J. of Appl. Phys., 58, 321 (1985).CrossRefGoogle Scholar
6.) Wilmsen, C., et. al., presented at the Third National Review Meeting on SiC, North Carolina State University in Raleigh, NC, 1986.Google Scholar
7.) Messick, L., Moazed, K. et al. , op. cit.Google Scholar
8.) Bellina, J.J. and Zeller, M.V., presented at the 1987 Spring Meeting, Anaheim, CA 1987.Google Scholar
9.) Bellina, J.J., Ferrante, J., and Zeller, M.V., J. Vac. Sci. Technol. A4, 1692 (1986).CrossRefGoogle Scholar
10.) Chaudhry, M.I., Ph.D. Thesis, University of Notre Dame, 1986.Google Scholar
11.) Addamiano, A., United States Patent Office, No. 3, 510, 733, May 5, 1970.Google Scholar
12.) Grant, J.T. and Haas, T.W., Surf. Sci., 23, 347 (1970).CrossRefGoogle Scholar
13.) Bellina, J.J. Jr and Zeller, M.V., Appl. Surf. Sci., 25, 380 (1986).CrossRefGoogle Scholar
14.) Pirouz, P., Chorey, C.M., and Powell, J.A., Appl. Phys. Lett., 50, 221 (1987).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 4 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 5th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

AES Studies of the M/SiC Interface with Metal Carbide Formers
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

AES Studies of the M/SiC Interface with Metal Carbide Formers
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

AES Studies of the M/SiC Interface with Metal Carbide Formers
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *