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Adhesion of Nanoscale Metal Clusters to Semiconductor Surfaces: A Scanning Tunneling Microscopy Examination

Published online by Cambridge University Press:  15 February 2011

SHIHCHER T. LIN  and
R. P. ANDRES
SHIHCHER T. LIN
Affiliation:
School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, U. S. A.
R. P. ANDRES
Affiliation:
School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, U. S. A.
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Abstract

Scanning tunneling Microscopy (STM) is used to investigate the initial stage of metal overlayer formation on semiconductor surfaces. STM scans are presented of preformed nanometer diameter Au clusters deposited at room temperature on molybdenum disulfide and hydrogen terminated silicon substrates. These scans show that the Au clusters are substantially deformed by interfacial forces between the cluster and substrate. The extent of deformation depends on the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 149
Copyright
Copyright © Materials Research Society 1994

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References

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