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Accelerated Reliability Test Inputs in Analyzing the Device Response of MgZnO Based UV Detector

Published online by Cambridge University Press:  01 February 2011

S.S. Hullavarad
Affiliation:
Center for Superconductivity Research, Department. of Physics, University of Maryland, College Park, MD, 20742
I. Takeuchi
Affiliation:
Center for Superconductivity Research, Department. of Physics, University of Maryland, College Park, MD, 20742
J. Berger
Affiliation:
Center for Superconductivity Research, Department. of Physics, University of Maryland, College Park, MD, 20742
S. Dhar
Affiliation:
Center for Superconductivity Research, Department. of Physics, University of Maryland, College Park, MD, 20742
K.S. Chang
Affiliation:
Center for Superconductivity Research, Department. of Physics, University of Maryland, College Park, MD, 20742
T. Venkatesan
Affiliation:
Center for Superconductivity Research, Department. of Physics, University of Maryland, College Park, MD, 20742
T.C. Loughran
Affiliation:
Department of Electrical and Computer Engineering, University of Maryland, College Park, MD, 20742
R.D. Vispute
Affiliation:
Blue Wave Semiconductors Inc., 6208 Three Apple Downs, Columbia, MD, 21045
S.N. Yedave
Affiliation:
Blue Wave Semiconductors Inc., 6208 Three Apple Downs, Columbia, MD, 21045
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Abstract

In this paper we present the accelerated reliability testing of MgZnO based UV detectors. The UV detectors are fabricated on glass, quartz and sapphire substrates by Pulsed Laser Deposition (PLD) technique. The films are highly oriented and show sharp transmission at 350nm and 330nm for Mg composition of 10% and 20% in ZnO, respectively. The device response has been studied and life expectancy of the devices has been estimated from the accelerated tests.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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Accelerated Reliability Test Inputs in Analyzing the Device Response of MgZnO Based UV Detector
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