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Above and below Bandgap Excitation of Er-defect Complexes and Isolated Er in Er-implanted GaN

  • A. Braud (a1), M. Abouzaid (a1), M. Wojdak (a1), J. L. Doualan (a1), R. Moncorge (a1), B. Pipeleers (a2) and A. Vantomme (a2)...


Photoluminescence (PL) spectra, luminescence dynamics and luminescence saturation of the Er3+ 4I13/24I15/2 transition in Er-implanted GaN samples at 7K are investigated. Under below-gap excitation, different Er centers are identified. Several Er centers are clearly excited via local defects or impurities. Er-defect complexes excited by above or below bandgap light are compared. Luminescence dynamics study shows that the 4I13/2 manifold has a shorter lifetime when Er ions are part of Er-defect complexes than when Er ions are isolated from any defect. The saturation of Er luminescence is investigated for the different types of Er center corresponding to specific excitation wavelengths.



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