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5.5 kV Bipolar Diodes From High Quality CVD 411-SiC

Published online by Cambridge University Press:  10 February 2011

K. G. Irvine ,
R. Singh ,
M. J. Paisley ,
J. W. Palmour ,
O. Kordina  and
C. H. Carter Jr.
K. G. Irvine
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, USA
R. Singh
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, USA
M. J. Paisley
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, USA
J. W. Palmour
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, USA
O. Kordina
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, USA
C. H. Carter Jr.
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, USA
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Abstract

Thick, high quality 4H-SiC material suitable for high power devices has been grown in a hot-wall reactor. Recent improvements to the growth process have improved our thickness uniformity over a 50mm wafer to less than 1% and the doping uniformity to less than 5%, both values expressed as σ/mean.

A record breaking reverse blocking voltage of 5.5 kV was obtained on P-i-N diodes fabricated from a 85μm thick film. The on-state voltage drop was 5.4 V at 100 A/cm2. From this on-state voltage drop, the carrier lifetime was estimated in excess of 1μs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 119
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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