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5.5 kV Bipolar Diodes From High Quality CVD 411-SiC

  • K. G. Irvine (a1), R. Singh (a1), M. J. Paisley (a1), J. W. Palmour (a1), O. Kordina (a1) and C. H. Carter (a1)...

Abstract

Thick, high quality 4H-SiC material suitable for high power devices has been grown in a hot-wall reactor. Recent improvements to the growth process have improved our thickness uniformity over a 50mm wafer to less than 1% and the doping uniformity to less than 5%, both values expressed as σ/mean.

A record breaking reverse blocking voltage of 5.5 kV was obtained on P-i-N diodes fabricated from a 85μm thick film. The on-state voltage drop was 5.4 V at 100 A/cm2. From this on-state voltage drop, the carrier lifetime was estimated in excess of 1μs.

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References

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1. Kordina, O., Hallin, C., Henry, A., Bergman, J. P., Ivanov, I., Ellison, A., Son, N. T., and Janzen, E., Phys. Stat. Sol. B, 202 (1997).
2. Kordina, O., Henry, A., Janzen, E., and Carter, C.H. Jr., Proceedings of the 7t' International Conference on Silicon Carbide, III-Nitrides and Related Materials, September 1997, Stockholm, Sweden, Part 1, p. 97, (Trans. Tech. Publications LTD 1998).
3. Burk, A.A. Jr., Loughlin, M.J., and Mani, S.S., Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, September 1997, Stockholm, Sweden, Part1, p. 83, (Trans. Tech. Publications LTD 1998).
4. Henry, A., Linköping University, Sweden (private communication).
5. Ivanov, I.G., Hallin, C., Henry, A., Kordina, O., and Janzen, E., J. Appl. Phys. 80, 3504 (1996).
6. Baliga, B. J., Power Semiconductor Devices, PWS Publishing, 1996.

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