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500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage

Published online by Cambridge University Press:  01 February 2011

Hiroshi Kambayashi ,
Jiang Li ,
Nariaki Ikeda  and
Seikoh Yoshida
Hiroshi Kambayashi
Affiliation:
kambayashi.hiroshi@furukawa.co.jp, The Furukawa Electric Co., Ltd., Yokohama R&D Laboratories, 2-4-3 Okano, Nishi-ku, Yokohama, Kanagawa, 220-0073, Japan
Jiang Li
Affiliation:
ljiang@yokoken.furukawa.co.jp
Nariaki Ikeda
Affiliation:
nariaki@yokoken.furukawa.co.jp, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama, Kanagawa, 220-0073, Japan
Seikoh Yoshida
Affiliation:
seikoh@yokoken.furukawa.co.jp, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama, Kanagawa, 220-0073, Japan
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Abstract

It is reported that we demonstrated a large current operation AlGaN/GaN HFET with a low-on state resistance and a high breakdown voltage operation at room temperature and 500 K. We developed our unique ohmic electrode using Ti/AlSi/Mo. In addition, we investigated the dependence between the distance from the gate electrode to the drain electrode and the off-state breakdown voltage. As a result, the breakdown voltage of a unit HFET was over 1100 V. Furthermore, on the large scale HFET with the gate width of 240 mm, the maximum drain current of over 50 A was obtained at room temperature and also, that of over 25 A was obtained at 500 K. The off-state breakdown voltage was obtained about 800 V at room temperature and about 600 V at 500 K, although Si-based FETs can not operate in such a high temperature.

Keywords

III-Velectrical propertiesAuger electron spectroscopy (AES)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-20
Copyright
Copyright © Materials Research Society 2007

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References

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