Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-27T00:06:56.912Z Has data issue: false hasContentIssue false
  • English
  • Français

3d Transition Metals in II-VI Semiconductors

Published online by Cambridge University Press:  21 February 2011

D. Heiman ,
M. Dahl ,
X. Wang ,
P.A. Wolff ,
P. Becla ,
A. Petrou  and
A. Mycielski
D. Heiman
Affiliation:
MIT Francis Bitter National Magnet Lab, Cambridge, MA 02139
M. Dahl
Affiliation:
MIT Francis Bitter National Magnet Lab, Cambridge, MA 02139
X. Wang
Affiliation:
MIT Francis Bitter National Magnet Lab, Cambridge, MA 02139
P.A. Wolff
Affiliation:
MIT Francis Bitter National Magnet Lab, Cambridge, MA 02139
P. Becla
Affiliation:
MIT Francis Bitter National Magnet Lab, Cambridge, MA 02139
A. Petrou
Affiliation:
Physics Department, SUNY Buffalo, NY 14260
A. Mycielski
Affiliation:
Institute of Solid State Physics, Polish Academy of Science, Warsaw
Get access

Abstract

The magnetic and electronic properties of some I-VI semiconductors with 3d transition metals other than Mn are presented. For example, the nonzero orbital moment in Fe2+ leads to more complex electronic energy levels than for Mnt ions. In (CdFe)Se, inelastic light scattering experiments demonstrate that the ground state is nonmagnetic (Van Vleck ion), and directly measures the energy spacing between the three lowest levels. For Sc2+ ions the donor level lies above the bottom of the conduction band in the Cd-based materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 479
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mycielski, J., Sol. State Commun. 60, 165 (1986).Google Scholar
2. Wilamowski, Z., Swiatek, K., Died, T., and Kossut, J. (to be published).Google Scholar
3. Heiman, D., Isaacs, E.D., Petrou, A., Kershaw, R., Dwight, K., and Wold, A., Proc. 19th Int. Conf. Phys. Semicond., ed. Zawadski, W. (Academy of Science, Warsaw, 1989), p. 1539.Google Scholar
4. Scalbert, D., Cernogora, J., Mauger, A., Guillaume, C. Beniot a la, and Mycielski, A., Sol. State Commun. 69, 453 (1989).Google Scholar
5. Nawrocki, M., Planel, R., Fishman, G., and Galazka, R.R., Phys. Rev. Lett. 46, 735 (1981).Google Scholar
6. Heiman, D., Petrou, A., Bloom, S.H., Shapira, Y., Isaacs, E.D., and Giriat, W., Phys. Rev. Lett. 60, 1876 (1988).Google Scholar
7. Wolff, P.A., private communication.Google Scholar
8. Mycielski, A., J. Appl. Phys. 63, 3279 (1988).Google Scholar
9. Sokolov, V.I., Soy. Phys. Solid State 29, 1061 (1897).Google Scholar
10. Langer, J.M., Delerue, C., Lannoo, M., and Heinrich, H., Phys. Rev. B38, 7723 (1988).Google Scholar
11. Fazzio, A., Caldas, M.J., and Zunger, A., Phys. Rev. B30, 3430 (1984).Google Scholar