Skip to main content Accessibility help
×
Home

2D Dopant Profiling for Advanced Process Control

  • Xiang-Dong Wang (a1), Qianghua Xie (a1), Joe Hooker (a1), Shifeng Lu (a1), J. J. Lee (a1), Phil Tobin (a1), Wei Liu (a2) and Linda Cross (a3)...

Abstract

As the CMOS device dimensions continue to shrink, it is more and more critical to control the process parameters during mass production of advanced VLSI chips in order to achieve high yield and profitability. 2D dopant characterization is one of the critical techniques to resolve manufacturing excursions. A quick access to dopant distribution, especially precise delineation of p-n junction would readily provide critical information for many manufacturing issues, as well as device design and process development. Here we present our approaches to some of those issues with available techniques. The main techniques we used are dopant selective etching (DSE) and scanning probe microscopy based electrical measurements including scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM). These techniques provided complementary results and showed strengths in solving different issues. We have successfully delineated junction of CMOS devices with 0.13 μm technology with source/drain extensions. Other applications, including diode leakage, well-well isolation, and buried layer delineation with the combination of these methods are presented.

Copyright

References

Hide All
[1] International Technology Roadmap for Semiconductors (ITRS), by International SEMATECH, 2001.
[2] Williams, C. C., Slinkman, J., Hough, W. P., and Wickramasinghe, H. K., Appl. Phys. Lett. 55, 1662(1989).
[3] O'Malley, L., Timp, G. L., Moccio, S. V., Garno, J. P., and Kleiman, R. N., Appl. Phys. Lett. 74, 272(1999).
[4] Edwards, H., McGlothlin, R., Martin, R. S., E. U., , Gribelyuk, M., Mahaffy, R., Shih, C. K., List, R.S., and Ukraintsev, V. A., Appl. Phys. Lett. 72, 698(1998).
[5] Kopanski, J.J., Marchiando, J.F., Lowney, J.R., J. Vac. Sci. Technol. B14, 242(1996).
[6] Rau, W.D., Schwander, P., Baumann, F.H., Hoppner, W., Ourmazd, A., Phys. Rev. Lett. 82, 2614(1999).
[7] Takigami, T. and Tanimoto, M., Appl. Phys. Lett. 58, 2288(1996).
[8] Barrett, M., Dennis, M., Tiffin, D., Li, Y., and Shih, C.K., IEEE Electron Device Lett. 16, 118(1995).
[9] Spinella, C., Raineri, V., and Campisano, S. U., J. Electrochem. Soc., 142, 1601(1995).
[10] Kuhlman, K. R., Martens, R. L., Kelly, T. F., Evans, N. D. and Miller, M. K., Ultramicroscopy, 89, 169(2001).
[11] Turner, D. R., J. Electrochem. Soc., 107, 810(1960).
[12] Wu, C. P., Douglas, E.C., Mueller, C. W., and Williams, R., J. Electrochem. Soc. 126, 1982(1979).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed