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A 29Si-NMR Investigation of Amorphous Hydrogenated Silicon Nitride

Published online by Cambridge University Press:  28 February 2011

Mark A. Petrich ,
Rhett E. Livengood ,
Jeffrey A. Reimer  and
Dennis W. Hess
Mark A. Petrich
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 94720-9989.
Rhett E. Livengood
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 94720-9989.
Jeffrey A. Reimer
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 94720-9989.
Dennis W. Hess
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 94720-9989.
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Abstract

We present the results of a spectroscopic study of amorphous hydrogenated silicon nitride. The nitride was prepared by plasma enhanced chemical vapor deposition and was studied with infrared absorption (IR) and solid-state nuclear magnetic resonance (NMR) spectroscopies. This nitride film shows a particularly interesting distribution of hydrogen: hydrogen atoms are nearly exclusively bound to nitrogen.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 337
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Lowe, A.J., Powell, M.J., Elliott, S.R., J.Appl.Phys. 59, 1251 (1986).Google Scholar
2. Stein, H.J., Wells, V.A., Hampy, R.E., J.Electrochem.Soc., 126(10), 1750 (1979).CrossRefGoogle Scholar
3. Taft, E.A., J.Electrochem.Soc. 118(8), 1341 (1971).Google Scholar
4. Gerstein, B.C. and Dybowski, C.R., Transient Technigues in NMR of Solids, Academic Press, New York, 1985.Google Scholar
5. Mehring, Michael, High Resolution NMR in Solids, 2nd edition, Springer-Verlag, New York, 1983.Google Scholar
6. Marsmann, H., in NMR: Basic Princqiples and Pruqrgess, Volume 17: Oxeygn-17 and Silicon-29, Springer-Verlag, New York, 1981.Google Scholar
7. Lamotte, B., Rousseau, A., Chenevas-Paule, A., Journal de Physique, colloque C4, supplement to 42(10), C4–839 (1981).Google Scholar