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2.2 eV Luminescence in GaN

Published online by Cambridge University Press:  21 February 2011

D. M. Hofinann ,
D. Kovalev ,
G. Steude ,
D. Volm ,
B. K. Meyer ,
C. Xavier ,
T. Monteiro ,
E. Pereira ,
E. N. Mokov  and
H. Amano
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D. M. Hofinann
Affiliation:
Physik Department E 16, Technische Universität München, D-85747 Garching, Germany
D. Kovalev
Affiliation:
Physik Department E 16, Technische Universität München, D-85747 Garching, Germany
G. Steude
Affiliation:
Physik Department E 16, Technische Universität München, D-85747 Garching, Germany
D. Volm
Affiliation:
Physik Department E 16, Technische Universität München, D-85747 Garching, Germany
B. K. Meyer
Affiliation:
Physik Department E 16, Technische Universität München, D-85747 Garching, Germany
C. Xavier
Affiliation:
Departimento de Fisica, Universidade de Aveiro, Portugal
T. Monteiro
Affiliation:
Departimento de Fisica, Universidade de Aveiro, Portugal
E. Pereira
Affiliation:
Departimento de Fisica, Universidade de Aveiro, Portugal
E. N. Mokov
Affiliation:
Ioffe Physico-Technical Insitute, St. Petersburg, Russia
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1-501Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1-501Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
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Abstract

The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation methode on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 619
Copyright
Copyright © Materials Research Society 1996

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References

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