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1X Thin Films Prepared By Mass Separated Ion Beam Deposition

  • H. C. Hofsäss (a1), C. Ronntng (a1), U. Griesmeier (a1) and M. Gross (a1)

Abstract

We have studied the growth and the properties of CN films prepared by deposition of mass separated 12C+ and 14N+ ions. The film thickness and density were determined as a function of ion energy between 20 eV and 500 eV and for substrate temperatures of 20 °C and 350 °C. Sputtering effects limit the maximum N concentration to about 30 - 40 at.% even for ion energies as low as 20 eV. IR absorption measurements indicate predominantly C-N and C=N bonding and an amorphous or strongly disordered CN-network. For room temperature deposited CN films with N concentrations up to 25 at.% I-V curves of metal-CN-metal devices show Frenkel-Poole behavior due to field-enhanced thermal activation of localized electrons. Films deposited at 350 °C have N concentrations below 15 at.% and graphitic properties like low resistivity and a density close to graphite.

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1X Thin Films Prepared By Mass Separated Ion Beam Deposition

  • H. C. Hofsäss (a1), C. Ronntng (a1), U. Griesmeier (a1) and M. Gross (a1)

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