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1.3 νm InAs/GaAs Quantum Dots Directly CappedWith GaAs Grown By Metal Organic Chemical Vapor Deposition

  • K.F. Huang (a1), T.P. Hsieh (a2), N.T. Yeh (a3), W.J. Ho (a3), J.I. Chyi (a2) and M.C. Wu (a1)...

Abstract

Systematic studies of the growth temperature and growth rate effect of the formation of InAs/GaAs quantum dots (QDs) have been demonstrated. These QDs are formed with large InAs coverage (3.0 MLs) and periodic growth interruption via Strnski-Krastonov (S-K) epitaxial growth mode by using metalorganic chemical vapor deposition (MOCVD). The room temperature photoluminescence (PL) spectra show red-shift of peak wavelength by decreasing the InAs growth temperature from 540°C to 500°C. As growth rate increases from 0.05 ML/s to 0.2 ML/s at growth temperature of 500°C, PL linewidth could be narrowed and emission intensity could be increased. These results could be correlated to the In clusters and uniformity of InAs/GaAs QDs observed by scanning electron microscopy (SEM) image. Finally, the room temperature photoluminescence spectra of InAs/GaAs QDs directly capped with GaAs shows peak wavelength of 1.35 μm with narrow linewidth of 30.8 meV is obtained.

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1. Arakawa, Y. and Sakaki, H., Appl. Phys. Lett. 40, 939 (1982).
2. Park, G., Shchekin, O. B., Huffaker, D.L. and Deppe, D. G., IEEE Photonics Techno. Lett. 13, 230 (2000).
3. Shchekin, O. B. and Deppe, D. G., IEEE Photonics Techno. Lett. 14, 1231 (2002).
4. Nishi, K., Saito, H., Sugou, S., Lee, J.S., Appl. Phys.Lett 74, 1561 (1999).
5. Yeh, N.T., Nee, T.E. and Chyi, J.I., Appl. Phys. Lett. 76, 1567 (2000).
6. Stintz, A., Liu, G. T., Li, H., Lester, L.F., Malloy, K.J., IEEE Photonics Techno. Lett. 12, 591 (2000).
7. Joyce, P. B., Krzyzewski, T. J., Bell, G. R., Jones, T. S., Malik, S., Childs, D. and Murry, R., Phys. Rev. B 62, 10891 (2000).
8. Nakata, Y., Mukai, K., Sugawara, M., Ohtsubo, K., Ishikawa, H., and Yokoyama, N., J. Cryst. Growth 208, 93 (2000).
9. Tatebayashi, J., Nishioka, M. and Arakawa, Y., Appl. Phys. Lett. 78, 3469 (2001).
10. Bimberg, D., Grunddmann, M. and Ledentsov, N. N., Quantum Dot Herterostuctures (John Wiley & Sons Ltd, 1999) p. 78.
11. Joyce, P. B., Krzyzewski, T. J., Bell, G. R., Jones, T. S., Le Ru, E. C. and Murry, R., Phys. Rev B 64, 235317 (2001).

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1.3 νm InAs/GaAs Quantum Dots Directly CappedWith GaAs Grown By Metal Organic Chemical Vapor Deposition

  • K.F. Huang (a1), T.P. Hsieh (a2), N.T. Yeh (a3), W.J. Ho (a3), J.I. Chyi (a2) and M.C. Wu (a1)...

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