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Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHf x Ti1−x O3

  • Shen Hu (a1), Martin D. McDaniel (a1), Agham Posadas (a2), Chengqing Hu (a3), HsinWei Wu (a4), Edward T. Yu (a3), David J. Smith (a4), Alexander A. Demkov (a2) and John G. Ekerdt (a1)...

Abstract

This work reports the growth of crystalline SrHf x Ti1−x O3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225 °C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ~530 °C (x = 0) to ~660 °C (x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm2 leakage current at 1 MV/cm for x = 0.55.

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Copyright

Corresponding author

Address all correspondence to John G. Ekerdt at ekerdt@utexas.edu

References

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Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHf x Ti1−x O3

  • Shen Hu (a1), Martin D. McDaniel (a1), Agham Posadas (a2), Chengqing Hu (a3), HsinWei Wu (a4), Edward T. Yu (a3), David J. Smith (a4), Alexander A. Demkov (a2) and John G. Ekerdt (a1)...

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