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Low-temperature aqueous solution processed fluorine-doped zinc tin oxide thin-film transistors

Published online by Cambridge University Press:  26 January 2012

Jun-Hyuck Jeon ,
Young Hwan Hwang ,
JungHo Jin  and
Byeong-Soo Bae
Jun-Hyuck Jeon
Affiliation:
Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea
Young Hwan Hwang
Affiliation:
Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea
JungHo Jin
Affiliation:
Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea
Byeong-Soo Bae*
Affiliation:
Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea
*
Address all correspondence to Byeong-Soo Bae atbsbae@kaist.ac.kr
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Abstract

Novel fluorine-doped zinc tin oxide (ZTO:F) thin-film transistors (TFTs) have been fabricated using an aqueous solution process. Exploiting hydrolysis and condensation reactions in an aqueous solution process, organic-free ZTO:F thin films were fabricated at a low temperature of 250 °C. The fabricated TFT device shows a field-effect mobility of 2.85 cm2/V s, on-to-off current ratios exceeding 107, and sub-threshold swings of 0.83 V/dec. The ZTO:F TFT also displays high operational stability of ΔVth = 1.73 V despite incorporation of a large amount of fluorine and use of a low-temperature annealing process. This is attributed to effective passivation of oxygen vacancy diffusion by metal fluoride bonds at the ZTO:F channel/gate dielectric interface.

Type
Rapid Communications
Information
MRS Communications , Volume 2 , Issue 1 , March 2012 , pp. 17 - 22
Copyright
Copyright © Materials Research Society 2012

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