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Epitaxy growth and characterization of InAs p-i-n photodetector through ion exchange for mid-infrared detection on Si substrates

Published online by Cambridge University Press:  08 August 2018

Wan Khai Loke ,
Kian Hua Tan ,
Satrio Wicaksono  and
Soon Fatt Yoon
Wan Khai Loke*
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
Kian Hua Tan
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
Satrio Wicaksono
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
Soon Fatt Yoon
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
*
Address all correspondence to Wan Khai Loke at ewkloke@ntu.edu.sg
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Abstract

We report an epitaxy growth and characterization of InAs photodetector (PD) on virtual Ge/Si and GaP/Si substrates. The effect of different types of the virtual substrate on the structure and performance of the InAs PD was studied. Although the lattice mismatch between InAs and Si is large (11.6%), close to 100% relaxation of InAs was achieved on both virtual substrates. A higher surface roughness was observed in the InAs layer grown GaP/Si as compared with that of Ge/Si. InAs PD with room temperature blackbody specific detectivity of ~5 × 108 cm·Hz1/2/W is achieved in photovoltaic mode on both types of virtual substrate.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 3 , September 2018 , pp. 1085 - 1091
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Copyright
Copyright © Materials Research Society 2018 

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