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Emitting modification in Si-rich-SiN x films versus silicon nitride compositions

Published online by Cambridge University Press:  27 June 2017

T. Torchynska ,
G. Polupan ,
L. Khomenkova  and
A. Slaoui
T. Torchynska*
Affiliation:
Instituto Politécnico Nacional, ESFM, México DF, 07738, México
G. Polupan
Affiliation:
Instituto Politécnico Nacional, ESIME, México DF, 07320, México
L. Khomenkova*
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics at NASU, Kyiv, 03028, Ukraine
A. Slaoui
Affiliation:
ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2, France
*
Address all correspondence T. Torchynska, L. Khomenkova at ttorch@esfm.ipn.mx; khomen@ukr.net
Address all correspondence T. Torchynska, L. Khomenkova at ttorch@esfm.ipn.mx; khomen@ukr.net
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Abstract

SiN x films were grown by plasma-enhanced chemical vapor deposition on Si substrates with the composition controlled by the flow ratio R: ammonia to silane in the range R = 0.45–1.0. Then SiN x films were annealed at 1100 °C for 30 min to form Si-quantum dots (QDs). Fourier transform infrared spectroscopy study permits estimating SiN x compositions. Photoluminescence (PL) spectra of SiN x films included bands peaked at: 2.87–2.99, 2.42–2.54, 2.10–2.25, and 1.47–1.90 eV. Former three PL bands are attributed to emission via defects in SiN x films. Fourth PL band is assigned to exciton emission in Si QDs, detected by transmission electron microscopy study in films grown at R ≤ 0.67. The nature of non-radiative defects in SiN x films is discussed as well.

Type
Research Letters
Information
MRS Communications , Volume 7 , Issue 2 , June 2017 , pp. 280 - 285
Copyright
Copyright © Materials Research Society 2017 

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References

1. Belyi, V.I., Vasilyeva, L.L., Gennann, R., Ginovker, A.S., Gritsenko, V.A., Repinsky, S.M., Sinitsa, S.P., Smirnova, T.P., and Edelman, F.L.. In Silicon Nitride in Electronics, Materials Science Monographs, edited by V.I. Belyi (Elsevier Science Ltd, Amsterdam, 1988), vol. 34.Google Scholar
2. Pavesi, L. and Lockwood, D.J., Silicon Photonics (Springer-Verlag, Berlin, 2004), 398 p.Google Scholar
3. Sung, G.Y., Park, N.M., Shin, J.H., Kim, K.H., Kim, T.Y., Cho, K.S., and Huh, C.: Physics and device structures of highly efficient silicon quantum dots based silicon nitride light-emitting diodes. IEEE J. Sel. Top. Quantum Electron. 12, 1545 (2006).CrossRefGoogle Scholar
4. Wolkin, M., Jorne, J., Fauchet, P., Allan, G., and Delerue, C.: Electronic states and luminescence in porous silicon quantum dots: the role of oxygen. Phys. Rev. Lett. 82, 197 (1999).CrossRefGoogle Scholar
5. Park, N.M., Choi, C.J., Seong, T.Y., and Park, S.J.: Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride. Phys. Rev. Lett. 86, 1355 (2001).CrossRefGoogle ScholarPubMed
6. Dal Negro, L., Yi, J.H., Nguyen, V., Yi, Y., Michel, J., and Kimerling, L.C.: Spectrally enhanced light emission from aperiodic photonic structures. Appl. Phys. Lett. 86, 261905 (2005).CrossRefGoogle Scholar
7. Comedi, D., Zalloum, O.H.Y., Wojcik, J., and Mascher, P.: Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-rich Si oxide films. IEEE J. Sel. Top. Quantum Electron. 12, 1561 (2006).CrossRefGoogle Scholar
8. Pratibha Nalini, R., Khomenkova, L., Debieu, O., Cardin, J., Dufour, C., Carrada, M., and Gourbilleau, F.: SiO x /SiN y multilayers for photovoltaic and photonic applications. Nanoscale Res. Lett. 7, 124 (2012).CrossRefGoogle Scholar
9. Delachat, F., Carrada, M., Ferblantier, G., and Slaoui, A.: Properties of silicon nanoparticles embedded in SiN x deposited by microwave-PECVD. Nanotechnology 20, 415608 (2009).CrossRefGoogle ScholarPubMed
10. Keita, A.-S., En Naciri, A., Delachat, F., Carrada, M., Ferblantier, G., and Slaoui, A.: Spectroscopic ellipsometry investigation of the optical properties of nanostructured Si/SiN x films. J. Appl. Phys. 107, 093516 (2010).CrossRefGoogle Scholar
11. Torchynska, T.V., Casas Espinola, J.L., Vergara Hernandez, E., Khomenkova, L., Delachat, F., and Slaoui, A.: Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties. Thin Solid Films 581, 65 (2015).CrossRefGoogle Scholar
12. Torchynska, T.V., Casas Espinola, J.L., Khomenkova, L., Vergara Hernandez, E., Andraca Adame, J.A., and Slaoui, A.: Structural and light emitting properties of silicon-rich silicon nitride films grown by plasma enhanced-chemical vapor deposition. Mater. Sci. Semicond. Proc. 37, 46 (2015).CrossRefGoogle Scholar
13. Delachat, F., Elaboration and characterization of Si-licon nanoparticles in silicon nitride for photovoltaic application, Ph.D. Thesis, ESS-University of Strasbourg, France, 2010.Google Scholar
14. Torchynska, T.V., Goldstein, Y., Many, A., Jedrzejewskii, J., and Kolobov, A.V.: Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge. Microelectron. Eng. 66, 83 (2003).CrossRefGoogle Scholar
15. Khomenkova, L., Gourbilleau, F., Cardin, J., Jambois, O., Garrido, B., and Rizk, R.: Long lifetime and efficient emission from Er3+ ions coupled to Si nanoclusters in Si-rich SiO2 layers. J. Lumin. 129, 1519 (2009).CrossRefGoogle Scholar
16. Scardera, G., Puzzer, T., Perez-Wurfl, I., and Conibeer, G.: The effects of annealing temperature on the photoluminescence from silicon nitride multilayer structures. J. Cryst. Growth 310, 3680 (2008).CrossRefGoogle Scholar
17. Tsu, D.V., Lucovsky, G., and Mantini, M.J.: Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition. Phys. Rev. B 33, 7069 (1986).CrossRefGoogle ScholarPubMed
18. Tomar, V.K., Patil, L.S., and Guatam, D.K.: Deposition and characterization of silicon nitride films using HMDS for photonics applications. J. Optoelectron. Adv. Mater. 10, 2657 (2008).Google Scholar
19. Nalwa, H.S., Silicon-Based Materials and Devices: Properties and Devices (Academic Press, 2001), vol. 1, Chapter 5, pp. 210–211.Google Scholar
20. Hsiao, H.L., Yang, A.B., and Hwang, H.L.: Luminescence and structural properties of silicon-rich nitride by X-ray absorption spectroscopy. J. Phys. Chem. Solids 69, 278 (2008).CrossRefGoogle Scholar
21. Goncharova, L.V., Nguyen, P.H., Karner, V.L., D'Ortenzio, R., Chaudhary, S., Mokry, C.R., and Simpson, P.J.: Si quantum dots in silicon nitride: quantum confinement and defects. J. Appl. Phys. 118, 224302 (2015).CrossRefGoogle Scholar
22. Kistner, J., Chen, X., Weng, Y., Strunk, H.P., Schubert, M.B., and Werner, J.H.: Photoluminescence from silicon nanocrystals embedded in silicon nitride fabricated by low-pressure chemical vapor deposition followed by high-temperature annealing. J. Appl. Phys. 110, 023520 (2011).CrossRefGoogle Scholar
23. Deshpande, S.V., Gulari, E., Brown, S.W., and Rand, S.C.: Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition. J. Appl. Phys. 77, 6534 (1995).CrossRefGoogle Scholar
24. Mo, C.M., Zhang, L.D., Xie, C.Y., and Wang, T.: Luminescence of nanometer-sized amorphous silicon nitride solids. J. Appl. Phys. 73, 5185 (1993).CrossRefGoogle Scholar
25. Warren, W.I., Lenahan, P.M., and Curry, S.E.: First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride. Phys. Rev. Lett. 65, 207 (1990).CrossRefGoogle ScholarPubMed
26. Sain, B., and Das, D.: Tunable photoluminescence from nc-Si/a-SiN x :H quantum dot thin films prepared by ICP-CVD. Phys. Chem. Chem. Phys. 15, 3881 (2013).CrossRefGoogle Scholar
27. Cho, C.H., Kim, B.H., Park, N.M., and Sung, G.Y.: Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film. Appl. Phys. Lett. 86, 143107 (2005).CrossRefGoogle Scholar
28. Torchynska, T.V., Nanocrystals and quantum dots. Some physical aspects. In Nanocrystals and Quantum Dots of Group IV Semiconductors, edited by Torchynska, T.V., Vorobiev, Yu. (American Scientific Publisher, Stevenson Ranch, CA, USA) 2010, p.1–40.Google Scholar
29. Torchynska, T.V.: Quantum emission efficiency of nanocrystalline and amorphous Si quantum dots. Physica E 44, 56 (2011).CrossRefGoogle Scholar
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