Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-22T11:09:09.612Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain scaling for CMOS

Published online by Cambridge University Press:  12 February 2014

S.W. Bedell ,
A. Khakifirooz  and
D.K. Sadana
S.W. Bedell
Affiliation:
IBM T.J. Watson Research Center; bedells@us.ibm.com
A. Khakifirooz
Affiliation:
IBM T.J. Watson Research Center; khaki@us.ibm.com
D.K. Sadana
Affiliation:
IBM T.J. Watson Research Center; dksadana@us.ibm.com
Get access

Abstract

This article describes various techniques for applying strain to current and future complementary metal–oxide–semiconductor (CMOS) channels to boost CMOS performance. A brief history of both biaxial and uniaxial strain engineering in planar CMOS technology is discussed. Scalability challenges associated with process-induced uniaxial strain in sub-22 nm CMOS is highlighted in view of shrinking device dimensions and 3D device architecture (such as fin field-effect transistors [FinFETs]). Non-uniform strain relaxation in patterned geometries in tight pitch two- and three-dimensional devices is addressed. A case is made that the future scalable strain platform will require a combination of biaxial strain at wafer level in conjunction with local uniaxial strain. Finally, potential application of strain engineering to advanced III–V metal oxide semiconductor FET channels will be examined.

Keywords

III-Vmicroelectronicssiliconstress/strain relationshipsemiconducting
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 2: Elastic Strain Engineering , February 2014 , pp. 131 - 137
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Manasevit, H.M., Gergis, I.S., Jones, A.B., Appl. Phys. Lett. 41, 464 (1982).CrossRefGoogle Scholar
Ito, S., Namba, H., Yamaguchi, K., Hirata, T., Ando, K., Koyama, S., Kuroki, S., Ikezawa, N., Suzuki, T., Saitoh, T., Horiuchi, T., IEDM Tech. Dig. 247 (2000).Google Scholar
Welser, J., Hoyt, J.L., Gibbons, J.F., IEDM Tech. Dig. 1000 (1992).Google Scholar
Gannavaram, S., Pesovic, N., Ozturk, C., IEDM Tech. Dig. 437 (2000).Google Scholar
Lim, K.-Y., Lee, H., Ryu, C., Seo, K.-I., Kwon, U., Kim, S., Choi, J., Oh, K., Jeon, H.K., Song, C., Kwon, T.-O., Cho, J., Lee, S., Sohn, Y., Yoon, H.S., Park, J., Lee, K., Kim, W., Lee, E., Sim, S.-P., Koh, C.G., Kang, S.B., Choi, S., Chung, C., IEDM Tech. Dig. 229 (2010).Google Scholar
Fitzgerald, E.A., Xie, Y.-H., Green, M.L., Brasen, D., Kortan, A.R., Michel, J., Mii, Y.-J., Weir, B.E., Appl. Phys. Lett. 59, 811 (1991).Google Scholar
Rim, K., Welser, J., Hoyt, J.L., Gibbons, J.F., IEDM Tech. Dig. 517 (1995).Google Scholar
Lee, B.H., Mocuta, A., Bedell, S., Chen, H., Sadana, D., Rim, K., O’Neil, P., Mo, R., Chan, K., Cabral, C., Lavoie, C., Mocuta, D., Chakravarti, A., Mitchell, R.M., Mezzapelle, J., Jamin, F., Sendelbach, M., Kermel, H., Gribelyuk, M., Domenicucci, A., Jenkins, K.A., Narasimha, S., Ku, S.H., Ieong, M., Yang, I.Y., Leobandung, E., Agnello, P., Haensch, W., Welser, J., IEDM Tech. Dig. 946 (2002).Google Scholar
Bedell, S.W., Fogel, K., Sadana, D.K., Chen, H., Appl. Phys. Lett. 85, 5869 (2004).CrossRefGoogle Scholar
Ghani, T., Armstrong, M., Auth, C., Bost, C.M., Charvat, P., Glass, G., Hoffmann, T., Johnson, K., Kenyon, C., Klaus, J., McIntyre, B., Mistry, K., Murthy, A., Sandford, J., Silberstein, M., Sivakumar, S., Smith, P., Zawadzki, K., Thompson, S., Bohr, M., IEDM Tech. Dig. 978 (2003).Google Scholar
Sun, Y., Thompson, S.E., Nishida, T., J. Appl. Phys. 101, 104503 (2007).CrossRefGoogle Scholar
Wang, J., Tateshita, Y., Yamakawa, S., Nagano, K., Hirano, T., Kikuchi, Y., Miyanami, Y., Yamaguchi, S., Tai, K., Yamamoto, R., Kanda, S., Kimura, T., Kugimiya, K., Tsukamoto, M., Wakabayashi, H., Tagawa, Y., Iwamoto, H., Ohno, T., Saito, M., Kadomura, S., Nagashima, N., Symp. VLSI tech. 46 (2007).Google Scholar
Packan, P., Akbar, S., Armstrong, M., Bergstrom, D., Brazier, M., Deshpande, H., Dev, K., Ding, G., Ghani, T., Golonzka, O., Han, W., He, J., Heussner, R., James, R., Jopling, J., Kenyon, C., Lee, S.-H., Liu, M., Lodha, S., Mattis, B., Murthy, A., Neiberg, L., Neirynck, J., Pae, S., Parker, C., Pipes, L., Sebastian, J., Seiple, J., Sell, B., Sharma, A., Sivakumar, S., Song, B., St. Amour, A., Tone, K., Troeger, T., Weber, C., Zhang, K., Luo, Y., Natarajan, S., IEDM Tech. Dig. 659 (2009).Google Scholar
Narasimha, S., Chang, P., Ortolland, C., Fried, D., Engbrecht, E., Nummy, K., Parries, P., Ando, T., Aquilino, M., Arnold, N., Bolam, R., Cai, J., Chudzik, M., Cipriany, B., Costrini, G., Dai, M., Dechene, J., DeWan, C., Engel, B., Gribelyuk, M., Guo, D., Han, G., Habib, N., Holt, J., Ioannou, D., Jagannathan, B., Jaeger, D., Johnson, J., Kong, W., Koshy, J., Krishnan, R., Kumar, A., Kumar, M., Lee, J., Li, X., Lin, C., Linder, B., Lucarini, S., Lustig, N., McLaughlin, P., Onishi, K., Ontalus, V., Robison, R., Sheraw, C., Stoker, M., Thomas, A., Wang, G., Wise, R., Zhuang, L., Freeman, G., Gill, J., Maciejewski, E., Malik, R., Norum, J., Agnello, P., IEDM Tech. Dig. 52 (2012).Google Scholar
Auth, C., Allen, C., Blattner, A., Bergstrom, D., Brazier, M., Bost, M., Buehler, M., Chikarmane, V., Ghani, T., Glassman, T., Grover, R., Han, W., Hanken, D., Hattendorf, M., Hentges, P., Heussner, R., Hicks, J., Ingerly, D., Jain, P., Jaloviar, S., James, R., Jones, D., Jopling, J., Joshi, S., Kenyon, C., Liu, H., McFadden, R., McIntyre, B., Neirynck, J., Parker, C., Pipes, L., Post, I., Pradhan, S., Prince, M., Ramey, S., Reynolds, T., Roesler, J., Sandford, J., Seiple, J., Smith, P., Thomas, C., Towner, D., Troeger, T., Weber, C., Yashar, P., Zawadzki, K., Mistry, K., Symp. VLSI Tech. 131–132 (2012).Google Scholar
Yin, H., Huang, R., Hobart, K.D., Suo, Z., Kuan, T.S., Inoki, C.K., Shieh, S.R., Duffy, T.S., Kub, F.J., Sturm, J.C., J. Appl. Phys. 91, 9716 (2002).CrossRefGoogle Scholar
Yin, H., Hobart, K.D., Kub, F.J., Shieh, S.R., Duffy, T.S., Sturm, J.C., Appl. Phys. Lett. 84, 3624 (2004).CrossRefGoogle Scholar
Domenicucci, A., Bedell, S., Roy, R., Sadana, D.K., Mocuta, A., in Proceedings of the 14th Conference of Microscopy of Semiconducting Materials, Cullis, A.G., Hutchinson, J.L., Eds. (Oxford, UK, 2005), vol. 107, p. 89.CrossRefGoogle Scholar
Irisawa, T., Numata, T., Tezuka, T., Usuda, K., Hiroshita, N., Sugiyama, N., VLSI Symp. Tech. Dig. 178 (2005).Google Scholar
Bedell, S.W., Daval, N., Khakifirooz, A., Kulkarni, P., Fogel, K., Domenicucci, A., Sadana, D.K., Microelectron. Eng. 88, 324 (2011).CrossRefGoogle Scholar
Xiong, W., Cleavelin, C.R., Kohli, P., Huffman, C., Schulz, T., Schruefer, K., Gebara, G., Mathews, K., Patruno, P., Le Vaillant, Y.-M., Cayrefourcq, I., Kennard, M., Mazure, C., Shin, K., Liu, T.–J.K., IEEE Electron Device Lett. 27 (7), 612 (2006).Google Scholar
Khakifirooz, A., Cheng, K., Nagumo, T., Loubet, N., Adam, T., Reznicek, A., Kuss, J., Shahrjerdi, D., Sreenivasan, R., Ponoth, S., He, H., Kulkarni, P., Liu, Q., Hashemi, P., Khare, P., Luning, S., Mehta, S., Gimbert, J., Zhu, Y., Zhu, Z., Li, J., Madan, A., Levin, T., Monsieur, F., Yamamoto, T., Naczas, S., Schmitz, S., Holmes, S., Aulnette, C., Daval, N., Schwarzenbach, W., Nguyen, B.-Y., Paruchuri, V., Khare, M., Shahidi, G., Doris, B., Symp. VLSI Tech. 117 (2012).Google Scholar
Khakifirooz, A., Sreenivasan, R., Taber, B.N., Allibert, F., Hashemi, P., Chern, W., Xu, N., Wall, E.C., Mochizuki, S., Li, J., Yin, Y., Loubet, N., Reznicek, A., Mignot, S.M., Lu, D., He, H., Yamashita, T., Morin, P., Tsutsui, G., Chen, C.-Y., Basker, V.S., Standaert, T.E., Cheng, K., Levin, T., Nguyen, B.Y., King Liu, T.-J., Guo, D., Bu, H., Rim, K., Doris, B., paper presented at IEEE S3S Conference, Monterey, CA, 7–10 October, 2013.Google Scholar
Cheng, K., Khakifirooz, A., Loubet, N., Luning, S., Nagumo, T., Vinet, M., Liu, Q., Reznicek, A., Adam, T., Naczas, S., Hashemi, P., Kuss, J., Li, J., He, H., Edge, L., Gimbert, J., Khare, P., Zhu, Y., Zhu, Z., Madan, A., Klymko, N., Holmes, S., Levin, T.M., Hubbard, A., Johnson, R., Terrizzi, M., Teehan, S., Upham, A., Pfeiffer, G., Wu, T., Inada, A., Allibert, F., Nguyen, B., Grenouillet, L., Le Tiec, Y., Wacquez, R., Kleemeier, W., Sampson, R., Dennard, R.H., Ning, T.H., Khare, M., Shahidi, G., Doris, B., IEDM Tech. Dig. 420 (2012).Google Scholar
Chang, L., Frank, D.J., Montoye, R.K., Koester, S.J., Ji, B.L., Coteus, P.W., Dennard, R.H., Haensch, W., Proc. IEEE 98 (2), 215 (2010).Google Scholar
Suthram, S., Hussain, M.M, Harris, H.R, Smith, C., Tseng, H.-H., Jammy, R., Thompson, S.E., IEEE Electron Device Lett. 29 (5), 480 (2008).Google Scholar
Xu, N., Ho, B., Choi, M., Moroz, V., King Liu, T.-J., IEEE Trans. Electron Devices 59 (6), 1592 (2012).Google Scholar
Saitoh, M., Kaneko, A., Okano, K., Kinoshita, T., Inaba, S., Toyoshima, Y., Uchida, K., Symp. VLSI Tech. 18 (2008).Google Scholar
Mujumdar, S., Maitra, K., Datta, S., IEEE Trans. Electron Devices 59 (1), 72 (2012).CrossRefGoogle Scholar
Nainani, A., Gupta, S., Moroz, V., Munkang, C., Yihwan, K., Cho, Y., Gelatos, J., Mandekar, T., Brand, A., Er-Xuan, P., Abraham, M.C., Schuegraf, K., IEDM Tech. Dig. 427 (2012).Google Scholar
Choi, M., Moroz, V., Smith, L., Penzin, O., in 6th International Silicon-Germanium Technology and Device Meeting (2012 ISTDM).Google Scholar
Kang, C.Y., Choi, R., Song, S.C., Choi, K., Ju, B.S., Hussain, M.M., Lee, B.H., Bersuker, G., Young, C., Heh, D., Kirsch, P., Barnet, J., Yang, J.-W., Xiong, W., Tseng, H., Jammy, R., IEDM Tech. Dig. 885 (2006).Google Scholar
Ok, I., Akarvardar, K., Lin, S., Baykan, M., Young, C.D., Hung, P.Y., Rodgers, M.P., Bennett, S., Stamper, H.O., Franca, D.L., Yum, J., Nadeau, J.P., Hobbs, C., Kirsch, P., Majhi, P., Jammy, R., IEDM Tech. Dig. 776 (2010).Google Scholar
Droopad, R., Rajagopalan, K., Abrokwah, J., Canonico, M., Passlack, M., Solid State Electron. 50, 1175 (2006).Google Scholar
Kim, D., PhD thesis, Stanford University (2009).Google Scholar
Nainani, A., Shyam, R., Witte, D., Kobayashi, M., Irisawa, T., Krishnamohan, T., Saraswat, K., Bennett, B.R., Ancona, M.G., Boos, J.B., IEDM Tech. Dig. 857 (2009).Google Scholar
Kaneko, T., Asahi, H., Okuno, Y., Gonda, S.-I., J. Cryst. Growth 95, 158 (1989).CrossRefGoogle Scholar
Kim, S.H., Yokoyama, M., Nakane, R., Ichikawa, O., Osada, T., Hata, M., Takenaka, M., Takagi, S., Symp. VLSI Tech. T51 (2013).Google Scholar