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Recent Advances in Cubic Boron Nitride Deposition

Published online by Cambridge University Press:  31 January 2011

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Abstract

This article reviews recent progress in the deposition of thick, adherent, cubic boron nitride (c-BN) films. Most of the previous work applied ion-assisted physical vapor deposition methods to deposit c-BN films. The ion impact was successful in nucleating c-BN crystallites, but it resulted in a very small crystallite size and introduced stress, which caused the delamination of films thicker than 100 nm. Recent efforts to reduce the stress and obtain thicker films are described. The limited success of these attempts motivated us to explore chemical vapor deposition methods based on fluorine chemistry. We review this work, detailing the success of depositing thick (>20 μ), stress-free, adherent films with a larger crystallite size and significantly better crystalline quality.

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Research Article
Copyright
Copyright © Materials Research Society 2003

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References

1.McKenzie, D.R., Sainty, W.G., and Green, D., Mater. Sci. Forum 54/55 (1990) p. 193.CrossRefGoogle Scholar
2.Mirkarimi, P.B., McCarty, K.F., and Medlin, D.L., Mater. Sci. Eng., R 21 (2) (1997) p. 47 and references therein.CrossRefGoogle Scholar
3.Yoshida, T., Diamond Relat. Mater. 5 (1996) p. 501 and references therein.CrossRefGoogle Scholar
4.Konyashin, I., Bill, J., and Aldinger, F., Chem. Vap. Deposition 3 (1997) p.239 and references therein.CrossRefGoogle Scholar
5.Lifshitz, Y., Köhler, Th., Frauenheim, Th., Guzmann, I., Hoffman, A., Zhang, R.Q., Zhou, X.T., and Lee, S.T., Science 297 (2002) p. 1531.CrossRefGoogle Scholar
6.Li, Q., Marks, L.D., Lifshitz, Y., Lee, S.T., and Bello, I., Phys. Rev. B 65 045415 (2002).CrossRefGoogle Scholar
7.McKenzie, D.R., McFall, W.D., Smith, H., Higgins, B., Boswell, R.W., Durandet, A., James, B.W., and Falconer, I.S., Nucl. Instrum. Methods Phys. Res., Sect. B 106 (1995) p. 90.CrossRefGoogle Scholar
8.Amagi, S., Takahashi, D., and Yoshida, T., Appl. Phys. Lett. 70 (1997) p. 946.CrossRefGoogle Scholar
9.Litvinov, D. and Clarke, R., Appl. Phys. Lett. 71 (1997) p. 1969.Google Scholar
10.Litvinov, D. and Clarke, R., Appl. Phys. Lett. 74 (1999) p. 955.CrossRefGoogle Scholar
11.Mirkarimi, P.B., Medlin, D.L., McCarty, K.F., Dibble, D.C., Clift, W.M., Knapp, J.A., and Barbour, J.C., J. Appl. Phys. 82 (1997) p. 1617.CrossRefGoogle Scholar
12.Feldermann, H., Merk, R., Hofsäss, H., Ronning, C., and Zheleva, T., Appl. Phys. Lett. 74 (1999) p. 1552.Google Scholar
13.Ulrich, S., Schwan, J., Donner, W., and Ehrhardt, H., Diamond Relat. Mater. 5 (1996) p. 548.CrossRefGoogle Scholar
14.Kim, I.H., Kim, K.S., Kim, S.H., and Lee, S.R., Thin Solid Films 290–291 (1996) p. 120.Google Scholar
15.Fitz, C., Kolitsch, A., and Fukarek, W., Thin Solid Films 389 (2001) p. 173.CrossRefGoogle Scholar
16.Donner, W., Dosch, H., Ulrich, S., Ehrhardt, H., and Abernathy, D., Appl. Phys. Lett. 73 (1998) p. 777.Google Scholar
17.Yamamoto, K., Keunecke, M., and Bewilogua, K., New Diam. Frontier Carbon Technol. 10 (2000) p. 225.Google Scholar
18.Keunecke, M., Yamamoto, K., and Bewilogua, K., Thin Solid Films 398–399 (2001) p. 142.Google Scholar
19.Widmayer, P., Ziemann, P., Ulrich, S., and Ehrhardt, H., Diamond Relat. Mater. 6 (1997) p. 621.Google Scholar
20.Fitz, C., Kolitsch, A., Möller, W., and Fukarek, W., Appl. Phys. Lett. 80 (2002) p. 55.Google Scholar
21.Boyen, H.-G., Widmayer, P., Schwertberger, D., Deyneka, N., and Ziemann, P., Appl. Phys. Lett. 76 (2000) p. 709.CrossRefGoogle Scholar
22.Ullmann, J., Baglin, J.E.E., and Kellock, A.J., J. Appl. Phys. 83 (1998) p. 2980.CrossRefGoogle Scholar
23.Angus, J.C. and Hayman, C.C., Science 241 (1988) p. 643.CrossRefGoogle Scholar
24.Butler, J.E. and Windischmann, H., MRS Bull. 23 (9) (1998) p. 22.CrossRefGoogle Scholar
25.Kuhr, M., Freudenstein, R., Reinke, S., and Kulisch, W., J. Chem. Vap. Deposition 3 (1996) p. 259.Google Scholar
26.Kuhr, M., Freudenstein, R., Reinke, S., Kulisch, W., Dollinger, G., and Bergmaier, A., Diamond Relat. Mater. 5 (1996) p. 984.Google Scholar
27.Dworschak, W., Jung, K., and Ehrhardt, H., Thin Solid Films 254 (1995) p. 65.Google Scholar
28.Bartl, A., Bohr, S., Haubner, R., and Lux, B., Int. J. Refract. Met. Hard. Mater. 14 (1996) p. 145.CrossRefGoogle Scholar
29.Berns, D.H. and Cappelli, M.A., Appl. Phys. Lett. 68 (1996) p. 2711.Google Scholar
30.Berns, D.H. and Cappelli, M.A., J. Mater. Res. 12 (1997) p. 2014.Google Scholar
31.Matsumoto, S. and Zhang, W.J., Jpn. J. Appl. Phys., Part 2: Lett. 39 (2000) p. L442.Google Scholar
32.Zhang, W.J. and Matsumoto, S., Appl. Phys. A 71 (2000) p. 469.Google Scholar
33.Matsumoto, S. and Zhang, W.J., Jpn. J. Appl. Phys., Part 2: Lett. 40 (2001) p.L570.Google Scholar
34.Zhang, W.J., Chan, C.Y., Chan, K.M., Bello, I., Lifshitz, Y., and Lee, S.T., Appl. Phys. A (2003) in press.Google Scholar
35.Zhang, W.J. and Matsumoto, S., Chem. Phys. Lett. 330 (2000) p. 243.CrossRefGoogle Scholar
36.Larsson, K. and Carlsson, J.-O., J. Phys. Chem. B 103 (1999) p. 6533.CrossRefGoogle Scholar
37.Zhang, W.J., Matsumoto, S., Kurashima, K., and Bando, Y., Diamond Relat. Mater. 10 (2001) p. 1881.Google Scholar
38.Zhang, W.J., Chan, C.Y., Bello, I., and Lee, S.T., in Proc. 9th Int. Symp. onAdvanced Materials (ISAM 2002), edited by Kanda, H., Matsumoto, S., Sato, T., Ando, T., Ishigaki, T., Hatano, T., Tanaka, K., Komatsu, S., Koizumi, S., Okada, K., Watanabe, K., and Mieno, M. (National Institute for Materials Science, Tsukuba, Japan, 2002) p. 33.Google Scholar
39.Werninghause, T., Hahn, J., Richter, F., and Zahn, D.R.T., Appl. Phys. Lett. 70 (1997) p. 958.CrossRefGoogle Scholar
40.Zhang, W.J. and Matsumoto, S., Phys. Rev. B 63 073201 (2001).CrossRefGoogle Scholar
41.Gu, C.Z. and Jiang, X., J. Appl. Phys. 88 (2000) p. 1788.CrossRefGoogle Scholar
42.Zhang, W.J., Jiang, X., and Matsumoto, S., Appl. Phys. Lett. 79 (2001) p. 4530.Google Scholar
43.Zhang, W.J., Matsumoto, S., Li, Q., Bello, I., and Lee, S.T., Adv. Funct. Mater. 12 (2002) p. 250.Google Scholar
44.Jiang, X., Helming, K., Zhang, W.J., and Matsumoto, S., Chem. Vap. Deposition 8 (2002) p. 262.Google Scholar