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Point Defects and Diffusion in Semiconductors

Published online by Cambridge University Press:  29 November 2013

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.

A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

Type
Point Defects Part I
Copyright
Copyright © Materials Research Society 1991

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References

1.Fahey, P., Griffin, R.B., and Plummer, J.D., Rev. Mod. Phys. 61 (1989) p. 289.CrossRefGoogle Scholar
2.Tan, T.Y. and Gösele, U., Appl. Phys. A37 (1985) p. 1.CrossRefGoogle Scholar
3.Shockley, W. and Last, J.T., Phys. Rev. 107 (1957) p. 391.CrossRefGoogle Scholar
4.Seeger, A. and Chik, C.P., Phys. Stat. Sol. 29 (1968) p. 455.CrossRefGoogle Scholar
5.Hu, S.M., J. Appl. Phys. 45 (1974) p. 1567.CrossRefGoogle Scholar
6.Tan, T.Y., Gösele, U., and Yu, S., Critical Rev. Solid State and Mater. Sciences 17 (1991) p. 47.CrossRefGoogle Scholar
7.Tuck, B., Atomic Diffusion in III-V Semiconductors (Adam Hilger, Bristol, 1988).Google Scholar
8.Fair, R.B., Advances in Chemistry Series, Vol. 221 (1989) p. 265.CrossRefGoogle Scholar
9.Van Vechten, J.A., Schmid, U., and Zhang, Q-S., J. Electronic Mater. 20 (1991) p. 431.CrossRefGoogle Scholar
10. Special issue: Rev. Phys. Appl. 23 (1988) p. 727et seq.CrossRefGoogle Scholar
11.Deppe, D.G. and Holonyak, N., J. Appl Phys. 64 (1988) p. R93.CrossRefGoogle Scholar
12.Frank, F.C. and Turnbull, D., Phys. Rev. 104 (1956) p. 617.CrossRefGoogle Scholar
13.Longini, R.L., Solid-State Electron. 5 (1962) p. 127.CrossRefGoogle Scholar
14.Gösele, U., Frank, W., and Seeger, A., Appl. Phys. 23 (1980) p. 361.CrossRefGoogle Scholar
15.Watkins, G., in Encyclopedia of Materials Science and Technology 4 (Verlag Chemie, Berlin, 1991) in press.Google Scholar
16.Stolwijk, N.A., Perret, M., and Mehrer, H., Defect and Diffusion Forum 59 (1988) 79.CrossRefGoogle Scholar
17.Mizuo, S. and Higuchi, H., Jpn. J. Appl. Phys. 20 (1981) p. 336.Google Scholar
18.Winteler, H.R., Helv. Phys. Acta 44 (1971) p. 451.Google Scholar
19.Laidig, W.D., Holonyak, H. Jr., Camras, M.D., Hess, K., Coleman, J.J., Dapkus, P., and Bardeen, J., Appl. Phys. Lett. 38 (1981) p. 776.CrossRefGoogle Scholar
20.Mei, P., Yoon, H.W., Venkatesan, T., Schwartz, S.A., and Harbison, J.B., Appl. Phys. Lett. 50 (1987) p. 1823.CrossRefGoogle Scholar
21.Yu, S., Tan, T.Y., and Gösele, U., submitted to J. Appl. Phys. Nov. 1 issue (1991).Google Scholar
22.Stolwijk, N.A., Frank, W., Hölzl, J., Pearton, S.J., and Haller, E.E., J. Appl. Phys. 57 (1985) p. 5211.CrossRefGoogle Scholar
23.Shaw, D., J. Cryst. Growth 86 (1988) p. 778.CrossRefGoogle Scholar