Skip to main content Accessibility help
×
Home

Novel materials by atomic layer deposition and molecular layer deposition

  • Markku Leskelä (a1), Mikko Ritala (a2) and Ola Nilsen (a3)

Abstract

Over the past 10 years, the number of materials that can be processed by atomic layer deposition (ALD) has expanded rapidly. Significant progress has been seen in ALD of high-κ oxides, ternary oxides, and noble metals, which have been studied quite extensively. High-κ oxide processes are used today in various industrial applications. However, many new applications are pushing the need for less common compounds, and therefore new processes are being developed (e.g., for fluorides, Li containing compounds, and phosphates). New ALD processes require new designs for volatile precursors to deliver elements with ligands that ensure self-limiting surface reactions. In addition to inorganics, new polymeric and inorganic-organic hybrid materials are opening new frontiers for ALD, including expansion of the process to include molecular layer deposition. A combination of inorganic and organic parts in the deposited layers offers expanding opportunities for tailoring materials properties.

Copyright

References

Hide All
1.Puurunen, R.L., J. Appl. Phys. 97, 121301 (2005).
2.Leskelä, M., Ritala, M., Angew. Chem. Int. Ed. 42, 5548 (2003).
4.International Technology Roadmap for Semiconductors, Front End Processes, (2007); http//public.itrs.net.
5.Kuesters, K.H., Beug, M.F., Schroeder, U., Nagel, N., Bewersdorff, U., Dallmann, G., Jakschik, S., Knoefler, R., Kudelka, S., Ludwig, C., Manger, D., Mueller, W., Tilke, A., Adv. Eng. Mater. 11, 241 (2009).
6.Puurunen, R.I., Sajavaara, T., Santala, E., Miikkulainen, V., Laitinen, M., Leskelä, M., J. Nanosci. Nanotechnol. 11 (2011), in press.
7.Fröhlich, K., Tapajna, M., Rosova, A., Dobrocka, E., Husekova, K., Aarik, J., Aidla, A., Electrochem. Solid State Lett. 11, G19 (2008).
8.Kim, S.K., Choi, G.-J., Lee, S.Y., Seo, M., Lee, S.W., Han, J.H., Ahn, H.-S., Han, S., Hwang, C.S., Adv. Mater. 20, 1429 (2008).
9.Niinistö, J., Kukli, K., Heikkilä, M.J., Ritala, M., Leskelä, M., Adv. Eng. Mater. 11, 222 (2009).
10.Kim, S.K., Hwang, C.S., Electrochem. Solid State Lett. 11, G9 (2008).
11.Niinistö, J., Kukli, K., Kariniemi, M., Ritala, M., Leskelä, M., Blasco, N., Pinchart, A., Lachaud, C., Laaroussi, N., Wang, Z., Dussarrat, C., J. Mater. Chem. 18, 5243 (2008).
12.Niinistö, J., Mäntymäki, M., Kukli, K., Costelle, L., Puukilainen, E., Ritala, M., Leskelä, M., J. Cryst. Growth 312, 245 (2010).
13.Lee, C.-K., Cho, E., Lee, H.-S., Hwang, C.S., Han, S., Phys. Rev. B 78, 012102 (2008).
14.Vehkamäki, M., Hatanpää, T., Ritala, M., Leskelä, M., J. Mater. Chem. 14, 3191 (2004).
15.Vehkamäki, M., Ritala, M., Leskelä, M., Jones, A.C., Davies, H.O., Sajavaara, T., Rauhala, E., J. Electrochem. Soc. 151, F69 (2004).
16.Ritala, M., Kukli, K., Rahtu, A., Räisänen, P.I., Leskelä, M., Sajavaara, T., Keinonen, J., Science 288, 319 (2000).
17.Vehkamäki, M., Hatanpää, T., Kemell, M., Ritala, M., Leskelä, M., Chem. Mater. 18, 3883 (2006).
18.Hwang, G.W., Kim, W.D., Hwang, C.S., Min, Y.-S., Cho, Y.J., J. Electrochem. Soc. 154, H915 (2007).
19.Min, Y.-S., Cho, Y.J., Aslanov, I.P., Han, J.H., Kim, W.D., Hwang, C.S., Chem. Vap. Deposition 11, 38 (2005).
20.Seim, H., Mölsä, H., Nieminen, M., Fjellvåg, H., Niinistö, L., J. Mater. Chem. 7, 449 (1997).
21.Vehkamäki, M., Hatanpää, T., Hänninen, T., Ritala, M., Leskelä, M., Electrochem. Solid State Lett. 2, 504 (1999).
22.Hatanpää, T., Vehkamäki, , Ritala, M., Leskelä, M., Dalton Trans. 39, 3219 (2010).
23.Harjunoja, J., Väyrynen, S., Putkonen, M., Niinistö, L., Rauhala, E., Thin Solid Films 253, 5228 (2007).
24.Lee, S.W., Kwon, O.S., Han, J.H., Hwang, C.S., Appl. Phys. Lett. 92, 22903 (2008).
25.Klaus, J.W., Ferro, S.J., George, S.M., Thin Solid Films 360, 145 (2000).
26.Kim, H., J. Vac. Sci. Technol., B 21, 2231 (2003).
27.Soininen, P.J., Elers, K.-E., Saanila, V., Kaipio, S., Sajavaara, T., Haukka, S., J. Electrochem. Soc. 152, G122 (2005).
28.Lim, B.S., Rahtu, A., Gordon, R.G., Nat. Mater. 2, 749 (2003).
29.Lee, B.H., Hwang, J.K., Nam, J.M., Lee, S.U., Kim, J.T., Koo, S.-M., Baunemann, A., Fischer, R.A., Sung, M.M., Angew. Chem. Int. Ed. 48, 4536 (2009).
30.Kang, S.-W., Yun, J.-Y., Chang, Y.H., Chem. Mater. 22, 1607 (2010).
31.Aaltonen, T., Alén, P., Ritala, M., Leskelä, M., Chem. Vap. Deposition 9, 45 (2003).
32.Aaltonen, T., Arstila, K., Ritala, M., Leskelä, M., Electrochem. Solid State Lett. 8, C99 (2005).
33.Hämäläinen, J., Munnik, F., Ritala, M., Leskelä, M., Chem. Mater. 20, 3564 (2008).
34.Hämäläinen, J., Puukilainen, E., Kemell, M., Costelle, L., Ritala, M., Leskelä, M., Chem. Mater. 21, 4868 (2009).
35.Kim, S.K., Han, S., Han, J.H., Hwang, C.S., Appl. Surf. Sci. 257, 4302 (2011).
36.Niskanen, A., Hatanpää, T., Arstila, K., Leskelä, M., Ritala, M., Chem. Vap. Deposition 13, 408 (2007).
37.Kariniemi, M., Niinistö, J., Hatanpää, T., Kemell, M., Sajavaara, T., Ritala, M., Leskelä, M., Chem. Mater. 23, 2901 (2011).
38.Natrajan, G., Maydannik, P.S., Cameron, D.C., Akopyan, I., Novikov, B.V., Appl. Phys. Lett. 97, 241905 (2010).
39.Pilvi, T., Arstila, K., Leskelä, M., Ritala, M., Chem. Mater. 19, 3387 (2007).
40.Pilvi, T., Puukilainen, E., Kressig, U., Leskelä, M., Ritala, M., Chem. Mater. 20, 5023 (2008).
41.Putkonen, M., technical program and abstracts, 9th International Conference on Atomic Layer Deposition, ALD 2009, Monterey (2009), p. 142.
42.Putkonen, M., Aaltonen, T., Alnes, M., Sajavaara, T., Nilsen, O., Fjellvåg, H., J. Mater. Chem. 19, 8767 (2009).
43.Aaltonen, T., Alnes, M., Nilsen, O., Costelle, L., Fjellvåg, H., J. Mater. Chem. 20, 2877 (2010).
44.Hämäläinen, J., Hatanpää, T., Holopainen, J., Munnik, F., Ritala, M., Leskelä, M., technical program and abstracts, 11th International Conference on Atomic Layer Deposition, ALD 2011, Cambridge, MA (2011), p. 153.
45.Pore, V., Hatanpää, T., Ritala, M., Leskelä, M., J. Am. Chem. Soc. 131, 3478 (2009).
46.Ritala, M., Pore, V., Hatanpää, T., Heikkilä, M., Leskelä, M., Mizohata, K., Schrott, A., Raoux, S., Rossnagel, S.M., Microelectron. Eng. 86, 1946 (2009).
47.Wuttig, M., Yamada, N., Nature Mat. 6, 824 (2007).
48.Pore, V., Knapas, K., Hatanpää, T., Sarnet, T., Kemell, M., Ritala, M., Leskelä, M., Mizohata, K., Chem. Mater. 23, 247 (2011).
49.Yoshimura, T., Tatsuura, S., Sotoyama, W., Appl. Phys. Lett. 59, 482 (1991).
50.Salmi, L.D., Puukilainen, E., Vehkamaeki, M., Heikkilae, M., Ritala, M., Chem. Vap. Deposition 15, 221 (2009).
51.Putkonen, M., Harjuoja, J., Sajavaara, T., Niinistö, L., J. Mater. Chem. 17, 664 (2007).
52.Yoshida, S., Ono, T., Esashi, M., Micro Nano Lett. 5 (5), 321 (2010).
53.Du, Y., George, S.M., J. Phys. Chem. C 111, 8509 (2007).
54.Adamczyk, N.M., Dameron, A.A., George, S.M., Langmuir 24, 2081 (2008).
55.Yoshimura, T., Tetsuzo, K.Y., Appl. Phys. Express 2, 015502 (2009).
56.Loscutoff, P.W., Zhou, H., Clendenning, S.B., Bent, S.F., ACS Nano 4, 331 (2010).
57.Zhou, H., Bent, S.F., ACS Appl. Mater. Interfaces 3, 505 (2011).
58.Loscutoff, P.W., Lee, H.-B.-R., Bent, F.F., Chem. Mater. 22, 5563 (2010).
59.Sabapathy, R.C., Crooks, R.M., Langmuir 16, 7783 (2000).
60.Li, Y.-H., Wang, D., Buriak, J.M., Langmuir 26, 1232 (2010).
61.Nilsen, O., Fjellvåg, H., Patent Cooperation Treat, World Intellectual Property Organization, Publication Number WO 2006071126.
62.George, S.M., Yoon, B., Dameron, A.A., Acc. Chem. Res. 42, 498 (2009).
63.Dameron, A.A., Seghete, D., Burton, B.B., Davidson, S.D., Cavanagh, A.S., Bertrand, J.A., George, S.M., Chem. Mater. 20, 3315 (2008).
64.Miller, D.C., Foster, R.R., Zhang, Y., Jen, S.-H., Bertrand, J.A., Lu, Z., Seghete, D., O’Patchen, J.L., Yang, R., Lee, Y.-C., J. Appl. Phys. 105, 093527 (2009).
65.Cho, S., Han, G., Kim, K., Sung, M.M., Angew. Chem. Int. Ed. 50, 2741 (2011).
66.Peng, Q., Gong, B., VanGundy, R.M., Parsons, G.N., Chem. Mater. 21, 820 (2009).
67.Liang, X., Weimer, A.W., J. Nanopart. Res. 12, 135 (2010).
68.Liang, X., Xinhua, Y.M., Yu, M., Li, J., Jiang, Y.-B., Weimer, A.W., Chem. Commun. 46, 7140 (2009).
69.Seghete, D., Davidson, B.D., Hall, R.A., Chang, Y.J., Bright, V.M., George, S.M., Sens. Actuators, A. A155, 8 (2009).
70.Klepper, K.B., Nilsen, O., Hansen, P.-A., Fjellvåg, H., Dalton Trans. 40, 4636 (2011).
71.Klepper, K.B., Nilsen, O., Fjellvåg, H., Dalton Trans. 39, 11628 (2010).
72.Sood, A., Sundberg, P., Malm, J., Karppinen, M., Appl. Surf. Sci. 257, 6435 (2011).
73.Yoon, B., Seghete, D., Cavanagh, A.S., George, S.M., Chem. Mater. 21, 5365 (2009).
74.Park, Y., Han, K.S., Lee, B.H., Cho, S., Lee, K.H., Im, S., Sung, M.M., Org. Electron. 12, 348 (2011).
75.Lee, B.H., Im, K.K., Lee, K.H., Im, S., Sung, M.M., Thin Solid Films 517, 4056 (2009).
76.Lee, B.H., Ryu, M.K., Choi, S.-Y., Lee, K.-H., Im, S., Sung, M.M., J. Am. Chem. Soc. 129, 16034 (2007).

Keywords

Related content

Powered by UNSILO

Novel materials by atomic layer deposition and molecular layer deposition

  • Markku Leskelä (a1), Mikko Ritala (a2) and Ola Nilsen (a3)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.