Skip to main content Accessibility help
×
Home

Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions

  • G. Grynkewich, J. Åkerman, P. Brown, B. Butcher, R.W. Dave, M. DeHerrera, M. Durlam, B.N. Engel, J. Janesky, S. Pietambaram, N.D. Rizzo, J.M. Slaughter, K. Smith, J.J. Sun and S. Tehrani...

Abstract

Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory.

Copyright

References

Hide All
1Miyazaki, T. and Tezuka, N.J. Magn. Magn. Mater. 139 (1995) p. L231.
2Moodera, J.S.Kinder, L.R.Wong, T.M. and Meservey, R.Phys. Rev. Lett. 74 (1995) p. 3273.
3Tehrani, S.Slaughter, J.M.DeHerrera, M.Engel, B.N.Rizzo, N.D.Salter, J.Durlam, M.Dave, R.W.Janesky, J. and Grynkewich, G.Proc. IEEE 91 (5) (2003) p. 703.
4Savtchenko, L.Engel, B.N.Rizzo, N.D.DeHerrera, M.F. and Janesky, J.A. “Method of writing to scalable magnetoresistance random-access memory element,” U.S. Patent No. 6,545,906 (April 8, 2003).
5Durlam, M.Addie, D.Akerman, J.Butcher, B.Brown, P.Chan, J.DeHerrera, M.Engel, B.N.Feil, B.Grynkewich, G.Janesky, J.Johnson, M.Kyler, K.Molla, J.Martin, J.Nagel, K.Ren, J.Rizzo, N.D.Rodriguez, T.Savtchenko, L. and Salter, E.J.IEEE Int. Electron Devices Meeting 2003 (2003) p. 34.6.1; B.N. Engel, J. Akerman, B. Butcher, R.W. Dave, M. DeHerrera, M. Durlam, G. Grynkewich, J. Janesky, S.V. Pietambaram, N.D. Rizzo, J.M. Slaughter, K. Smith, J.J. Sun, and S. Tehrani, IEEE Trans. Mag. (2004) in press.
6Parkin, S.S.P., More, N., and Roche, K.P., Phys. Rev. Lett. 64 (1990) p. 2304.
7Gallagher, W.J.Parkin, S.S.P.Lu, Y.Bian, X.P.Marley, A.Altman, R.A.Rishton, S.A.Roche, K.P.Jahnes, C.Shaw, T.M. and Xiao, G.J. Appl. Phys. 81 (1997) p. 3741.
8Tehrani, S.Slaughter, J.M.Chen, E.Durlam, M.Shi, J. and DeHerrera, M.IEEE Trans. Mag. 35 (2000) p. 2814.
9Johnson, M.IEEE Spectrum 37 (2) (2000) p. 33.

Keywords

Related content

Powered by UNSILO

Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions

  • G. Grynkewich, J. Åkerman, P. Brown, B. Butcher, R.W. Dave, M. DeHerrera, M. Durlam, B.N. Engel, J. Janesky, S. Pietambaram, N.D. Rizzo, J.M. Slaughter, K. Smith, J.J. Sun and S. Tehrani...

Metrics

Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.