Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-29T01:22:14.772Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanostructured Materials in Information Storage

Published online by Cambridge University Press:  31 January 2011

Zvonimir Z. Bandić ,
Dmitri Litvinov  and
M. Rooks

Abstract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

The ever-increasing demand for information storage has pushed research and development of nonvolatile memories, particularly magnetic disk drives and silicon-based memories, to areal densities where bit sizes are approaching nanometer dimensions. At this level, material and device phenomena make further scaling increasingly difficult. The difficulties are illustrated in the examples of magnetic media and flash memory, such as thermal instability of sub-100-nm bits in magnetic memory and charge retention in flash memory, and solutions are discussed in the form of patterned media and crosspoint memories. The materials-based difficulties are replaced by nanofabrication challenges, requiring the introduction of new techniques such as nanoimprinting lithography for cost-effective manufacturing and self-assembly for fabrication on the sub-25-nm scale. Articles in this issue describe block-copolymer lithographic fabrication of patterned media, materials studies on the scaling limits of phase-change-based crosspoint memories, nanoscale fabrication using imprint lithography, and biologically inspired protein-based memory.

Type
Research Article
Information
MRS Bulletin , Volume 33 , Issue 9: Nanostructured Materials in Information Storage , September 2008 , pp. 831 - 837
Copyright
Copyright © Materials Research Society 2008

References

1.Weller, D., Moser, A., IEEE Trans. Magn. 35, 4423 (1999).CrossRefGoogle Scholar
2.Weller, D., Moser, A., Folks, L., Best, M.E., Lee, W., Toney, M.F., Schwickert, M., Thiele, J.-U., Doerner, M.F., IEEE Trans. Magn. 36, 10 (2000).CrossRefGoogle Scholar
3.McFadyen, I.R., Fullerton, E.E., Carey, M.J., MRS Bull. 31, 379 (2006).CrossRefGoogle Scholar
4.Fazio, A., MRS Bull. 29, 814 (2004).CrossRefGoogle Scholar
5.Raoux, S., Rettner, C.T., Chen, Y.-C., Burr, G.W., MRS Bull. 33 (9) (2008).CrossRefGoogle Scholar
6.Bandic, Z.Z., Dobisz, E.A., Wu, T.W., Albrecht, T.R., Solid State Technol. 49 (9) (2006).Google Scholar
7.Sreenivasan, S.V., Resnick, D.J., Xu, F., Choi, J., Schumaker, P., LaBrake, D., McMackin, I., MRS Bull. 33 (9) (2008).CrossRefGoogle Scholar
8.Ross, C.A., Cheng, J.Y., MRS Bull. 33 (9) (2008).CrossRefGoogle Scholar
9.Tsaftaris, S.A., Hatzimanikatis, V., Katsaggelos, A.K., presented at Artificial Life X, Bloomington, IN, 3–7 June 2006.Google Scholar
10.Khizroev, S., Ikkawi, R., Amos, N., Chomko, R., Renugopalakrishnan, V., Haddon, R., Litvinov, D., MRS Bull. 33 (9) (2008).CrossRefGoogle Scholar