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MBE of Magnetic Metallic Structures

Published online by Cambridge University Press:  29 November 2013

G. A. Prinz
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Epitaxial growth of magnetic metals actually pre-dates epitaxial growth of semiconductors. The earliest work (1936), which reported single-crystal Fe growth on NaCl, exploited the fact that single-crystal substrates of NaCl were easy to obtain, readily cleaved, and could be cleaned in a vacuum by heating. The good lattice match between the two systems and lack of interfacial disruption upon growth permitted excellent quality single-crystal films of Fe to be grown in relatively modest vacuum. Improved vacuum techniques broadened the range of materials which could be studied, with respect to both the films and substrates. The most recent ultrahigh vacuum (UHV) techniques developed for molecular beam epitaxial growth of semiconductors, including the large array of electron-based analytical tools, have also been exploited to grow and characterize magnetic metal films.

Some requirements for these magnetic materials, such as the need for higher temperature effusion sources to generate useful fluxes of Fe, Co and Ni, and high vacuum in the presence of e-beam sources in order to avoid oxidation of the rare earths, served to stimulate new technical developments for the field in general. It is now possible to control growth to a fraction of a monolayer (ML) and even to know when one ML coverage is complete and another is beginning. The techniques have become so successful that a whole new subfield of magnetism has emerged — surface and interfacial magnetism — in which the work would be largely meaningless if one could not grow precisely characterized epitaxial magnetic metal films. Recent work has shown that it is now possible to grow single-crystal magnetic metal films on a wide variety of substrates, including insulators (oxides and salts), semiconductors, and metals.

Type
Magnetism and Magnetic Materials
Information
MRS Bulletin , Volume 13 , Issue 6 , June 1988 , pp. 28 - 31
Copyright
Copyright © Materials Research Society 1988

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References

1.Bruck, L., Ann. Phys. 26 (1936) p. 233.CrossRefGoogle Scholar
2.Waldrop, J.R. and Grant, R.W., Appl. Phys. Lett. 34 (1979) p. 630.CrossRefGoogle Scholar
3.Prinz, G.A. and Krebs, J.J., Appl. Phys. Lett. 39 (1981) p. 397.CrossRefGoogle Scholar
4.Ruckman, M.W., Joyce, J.J., and Weaver, J.J., Phys. Rev. B 33 (1986) p. 7029.CrossRefGoogle Scholar
5.Cullen, J.R., Hathaway, K.B., and Coey, J.M. D., J. Appl. Phys. 63 (1988) p. 3649.CrossRefGoogle Scholar
6.Prinz, G.A., Jonker, B.T., Krebs, J.J., Farrari, J.M., and Kovanic, F., Appl. Phys. Lett. 48 (1986) p. 1756.CrossRefGoogle Scholar
7.Farrow, R.F.C., Parkin, S.S.P., Speriosu, V.S., Wilts, C.H., Beyers, R.B., Pitner, P., Woodall, J.M., Wright, S.L., Kirchner, P.D., and Petrin, G.D., in Epitaxy of Semiconductor Layered Structures, edited by Tung, R.T., Dawson, L.R., and Gunshor, R.L. (Mater. Res. Soc. Symp. Proc. 102, Pittsburgh, PA, 1988) p. 483.Google Scholar
8.Batra, S., Woechak, A.M., Cohen, P.I., Lottis, D. K., and Dahlberg, E.D., J. Appl. Phys. 63 (1988) (in press).CrossRefGoogle Scholar
9.Schloemann, E., Rustison, R., Weissman, J., Van Hook, H.J., and Varitimas, T., J. Appl Phys. 63 (1988) p. 3140.CrossRefGoogle Scholar
10.Haase, O., Z. Naturforsch. 11-A (1956) p. 862.CrossRefGoogle Scholar
11.Gradmann, V. and Isbert, H.O., Mag. Magn. Mat. 15-18 (1980) P. 1109.CrossRefGoogle Scholar
12.Anderson, O.K., Madsen, J., Poulsen, U.K., Jepsen, O., and Kollar, J., Physica 86-88B (1977) p. 249.Google Scholar
13.Bader, S.D. and Moog, E.R., J. Appl. Phys. 61 (1987) p. 3729.CrossRefGoogle Scholar
14.Chambers, S.A., Wagener, T.J., and Weaver, J.H., Phys. Rev. B 36 (1987) p. 8992.CrossRefGoogle Scholar
15.Steigerwald, D.A. and Egelhoff, W.F. Jr., Surf. Sci. (1988) (in press).Google Scholar
16.Prinz, G.A., Phys. Rev. Lett. 54 (1985) p. 1051.CrossRefGoogle Scholar
17.Moruzzi, V.L., Marcus, P.M., Schwarz, K., and Mohn, P., Phys. Rev. B 34 (1986) p. 1784.CrossRefGoogle Scholar
18.Gradman, U. and Waller, G., Surf. Sci. 116 (1982) p. 539.CrossRefGoogle Scholar
19.Heinrich, B., Liu, C., and Arrott, A.S., J. Vac. Sci. Technol. B3 (1985) p. 766.CrossRefGoogle Scholar
20.Heinrich, B., Arrott, A.S., Cochran, J.F., Liu, C., and Myrtle, K., J. Vac. Sci. Technol. 4 (1986) p. 1376; Z.Q. Wang, Y.S. Li, F. Jona, and P.M. Marcus, Solid State Commuti. 61 (1987) p. 623.CrossRefGoogle Scholar
21.Marcus, P.M., Moruzzi, V.L., and Schwarz, K., in Computer-Based Microscopic Description of the Structure and Properties of Materials, edited by Broughton, J., Krakow, W., and Pantelides, S.T. (Mater. Res. Soc. Symp. Proc. 63, Pittsburgh, PA, 1985) p. 117.Google Scholar
22.Jonker, B.T. and Prinz, G.A., Surf. Sci. Lett. 172 (1986) p. 568.Google Scholar
23.Smith, G.C., Padmore, G.A., and Norris, C.. Surf. Sci. 119 (1982) p. 287.CrossRefGoogle Scholar
24.Fu, C.L., Freeman, A.J., and Oguchi, T., Phys. Rev. Lett. 54 (1985) p. 2700; R. Richter, J.G. Gay, and J.R. Smith, Phys. Rev. Lett. 54 (1985) p. 2704.CrossRefGoogle Scholar
25.Jonker, B.T., Walker, K.H., Kisker, E., Prinz, G.A., and Carbone, C., Phys. Rev. Lett. 57 (1986) p. 142.CrossRefGoogle Scholar
26.Heinrich, B., Urquhart, K.B., Arrott, A.S., Cochran, J.F., Myrtle, K., and Purcell, S.T., Phys. Rev. Lett. 59 (1987) p. 1756; N.C. Koon, B.T. Jonker, F.A. Volkening, J.J. Krebs, and G.A. Prinz, Phys. Rev. Lett. 59 (1987) p. 2463.CrossRefGoogle Scholar
27.Gay, J.G. and Richter, R., Phys. Rev. Lett. 56 (1986) p. 2728; J. Appl. Phys. 61 (1987) p. 3362.CrossRefGoogle Scholar
28.Thaller, B.J., Ketterson, J.B., and Hilliard, J.E., Phys. Rev. Lett. 41 (1978) p. 336.CrossRefGoogle Scholar
29.Kwo, J., Gyorgy, E.M., McWhan, D.B., Hong, M., DiSalvo, F.J., Vettier, C., and Bower, J.E., Phys. Rev. Lett. 55 (1985) p. 1402.CrossRefGoogle Scholar
30.Salamon, M.B., Sinha, Shantanu, Rhyne, J.J., Cunningham, J.E., Erwin, R.E., Borehers, J., and Flynn, C.P., Phys. Rev. Lett. 56 (1986) p. 259.CrossRefGoogle Scholar
31.Gyorgy, E.M.Dillon, J.F. Jr., McWhan, D.B., Rupp, L.W. Jr., Testardi, L.R., and Flanders, P.J., Phys. Rev. Lett. 45 (1980) p. 57.CrossRefGoogle Scholar
32.Xio, Gang and Chien, C.L., J. Appl. Phys. 61 (1987) p. 4061.CrossRefGoogle Scholar
33.Ellis, W.C. and Greiner, E.S., Trans. Am. Soc. Met. 29 (1941) p. 415.Google Scholar