Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-26T08:54:15.364Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution Z-Contrast Imaging of Semiconductor Interfaces

Published online by Cambridge University Press:  29 November 2013

D.E. Jesson  and
S.J. Pennycook
Get access

Extract

The structural and compositional integrity of interfaces between semiconductor multilayers can profoundly influence the optical and electronic properties of epitaxially grown heterostructures. Understanding the atomic-scale interfacial structure and chemistry is therefore essential to correctly relate electrical measurements to theoretical models and to correlate such effects with growth conditions. High-resolution electron microscopy (HREM) has played a pivotal role in this process, providing important information on interface commensurability and revealing the presence and nature of defects.

More recently, significant advances have been made in applying HREM to the difficult problem of chemical composition mapping in systems where no structural change occurs across the interfaces. The basis of such methods involves using the objective lens as a bandpass filter and tuning in on a specific range of spatial frequencies to form a chemically sensitive interference pattern. By using a suitable low-index zone axis and choosing an optimum range of specimen thickness, the patterns can indeed be extremely sensitive to the strength and periodicities of the projected potential.

Type
Imaging in Materials Science
Information
MRS Bulletin , Volume 16 , Issue 3: Imaging in Materials Science , March 1991 , pp. 34 - 40
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See, for example, Ourmazd, A., MRS Bulletin 15 (9) (1990) p. 64; errata 15 (11) (1990) p. 18.Google Scholar
2. Pennycook, S.J. and Jesson, D.E., Phys. Rev. Lett. 64 (1990) p. 938.Google Scholar
3. Jesson, D.E., Pennycook, S.J., and Chisholm, M.F., in Atomic Scale Structure of Interfaces, edited by Bringans, R.D., Feenstra, R.M., and Gibson, J.M. (Mater. Res. Soc. Symp. Proc. 159, Pittsburgh, PA., 1990), p. 439.Google Scholar
4. Pennycook, S.J. and Jesson, D.E., Ultrami-croscopy (in press).Google Scholar
5. Pennycook, S.J. Jesson, D.E., and Chisholm, M.F., in “Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors,” SPIE Proceedings Series 1284 (1990) p. 182.Google Scholar
6. Müller, E., Nissan, H.-U., Ospelt, M., and von Känel, H., Phys. Rev. Lett. 63 (1989) p. 1819.CrossRefGoogle Scholar
7. Ourmazd, A. and Bean, J.C., Phys. Rev. Lett. 55 (1985) p. 765.CrossRefGoogle Scholar
8. Littlewood, P.B., Phys. Rev. B 34 (1986) p. 1363.Google Scholar
9. LeGoues, F.K., Kesan, V.P., and Iyer, S.S., Phys. Rev. Lett. 64 (1990) p. 40.Google Scholar
10. Jesson, D.E., Pennycook, S.J., and Baribeau, J.-M., Phys. Rev. Lett. 66 (1991) p. 750. See also D.E. Jesson, S.J. Pennycook, and J.-M. Baribeau, in High Resolution Electron Microscopy of Defects in Materials, edited by R. Sinclair, D.J. Smith, and U. Dahmen (Mater. Res. Soc. Symp. Proc. 183, Pittsburgh, PA, 1990), p. 223.Google Scholar
11. Baribeau, J.-M., Jackman, T.E., Maigne, P., Houghton, D.C., and Denhoff, M.W., J. Vac. Sci. Technol. A5 (1987) p. 1898.Google Scholar
12. Kubby, J.A., Griffith, J.E., Becker, R.S., and Vickers, J. S., Phys. Rev. B 36 (1987) p. 6079.Google Scholar
13. Chadi, D.J., Phys. Rev. Lett. 59 (1987) p. 1691.Google Scholar
14. Iyer, S.S., Tsang, J.C., Copel, M., Pukite, P.R., and Tromp, R.M., Appl. Phys. Lett. 54 (1989) p. 219.CrossRefGoogle Scholar
15. Copel, M., Reuter, M.C., Kaxiras, E., and Tromp, R.M., Phys. Rev. Lett. 63 (1989) p. 632.Google Scholar
16. LeGoues, F.K., Kesan, V.P., Iyer, S.S., Tersoff, J., and Tromp, R., Phys. Rev. Lett. 64 (1990) p. 2038.Google Scholar
17. Yalisove, S.M., Tung, R.T., and Loretta, D., J. Vac. Sci. Technol. A7 (1989) p. 1472.Google Scholar
18. Hamers, R.J., Köhler, U.K., and Demuth, J.E., J. Vac. Sci. Technol. A8 (1990) p. 195.CrossRefGoogle Scholar