Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T20:03:26.925Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial challenges of GaN on silicon

Published online by Cambridge University Press:  08 May 2015

F. Semond
F. Semond*
Affiliation:
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, France; fs@crhea.cnrs.fr
Get access

Abstract

Recent successes with the fabrication of high-performance GaN-based heterostructures on silicon substrates have made this technology very promising. However, epitaxial growth of GaN on Si is challenging. This article presents some of the challenges of epitaxial growth of GaN-on-Si substrates focusing on basic aspects that are pertinent to consider for power electronics.

Keywords

nitrideepitaxynucleation & growthelectronic materialsemiconducting
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 5: Power Electronics with Wide Bandgap Materials , May 2015 , pp. 412 - 417
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Guha, S., Bojarczuk, N.A., Appl. Phys. Lett. 73, 1487 (1998).CrossRefGoogle Scholar
Tran, C.A., Osinski, A., Karlicek, R.F. Jr., Berishev, I., Appl. Phys. Lett. 75, 1494 (1999).CrossRefGoogle Scholar
Schremer, A.T., Smart, J.A., Wang, Y., Ambacher, O., MacDonald, N.C., Shealy, J.R., Appl. Phys. Lett. 76, 736 (2000).CrossRefGoogle Scholar
Semond, F., Lorenzini, P., Grandjean, N., Massies, J., Appl. Phys. Lett. 78, 335 (2001).CrossRefGoogle Scholar
Marchand, H., Zhao, L., Zhang, N., Moran, B., Coffie, R., Mishra, U.K., Speck, J.S., DenBaars, S.P., Freitas, J.A., J. Appl. Phys. 89, 7846 (2001).CrossRefGoogle Scholar
Follstaedt, D.M., Han, J., Provencio, P., Fleming, J.G., MIJ-NSR 4S1, G3.72 (1999).Google Scholar
Kaiser, S., Jakob, M., Zweck, J., Gebhardt, W., Ambacher, O., Dimitrov, R., Schremer, A.T., Smart, J.A., Shealy, J.R., J. Vac. Sci. Technol. B 18, 733 (2000).CrossRefGoogle Scholar
Semond, F., Cordier, Y., Grandjean, N., Natali, F., Damilano, B., Vézian, S., Massies, J., Phys. Status Solidi A 188, 501 (2001).3.0.CO;2-6>CrossRefGoogle Scholar
Zhu, D., Wallis, D.J., Humphreys, C.J., Rep. Prog. Phys. 76, 106501 (2013).CrossRefGoogle Scholar
Yole Développement, GaN-on-Si Substrate Technology and Market for LED and Power Electronics (2014); https://www.reportbuyer.com/product/2105839/gan-on-si-substrate-technology-and-market-for-led-and-power-electronics.html.Google Scholar
Baliga, B.J., Semicond. Sci. Technol. 28, 074011 (2013).CrossRefGoogle Scholar
Yanagihara, M., Uemoto, Y., Ueda, T., Tanaka, T., Ueda, D., Phys. Status Solidi A 206, 1221 (2009).CrossRefGoogle Scholar
Rowena, I.B., Selvaraj, S.L., Egawa, T., IEEE Electron Device Lett. 32, 1534 (2011).CrossRefGoogle Scholar
Medjdoub, F., Derluyn, J., Cheng, K., Leys, M., Degroote, S., Marcon, D., Visalli, D., Van Hove, M., Germain, M., Borghs, G., IEEE Electron Device Lett. 31, 111 (2010).CrossRefGoogle Scholar
Ueda, T., Ishida, M., Tanaka, T., Ueda, D., Jpn. J. Appl. Phys. 53, 100214 (2014).CrossRefGoogle Scholar
Wuerfl, J., Bahat-Treidel, E., Brunner, F., Cho, E., Hilt, O., Ivo, P., Knauer, A., Kurpas, P., Lossy, R., Schulz, M., Singwald, S., Weyers, M., Zhytnytska, R., Microelectron. Reliab. 51, 1710 (2011).CrossRefGoogle Scholar
Frayssinet, E., Cordier, Y., Schenk, H.P.D., Bavard, A., Phys. Status Solidi C 8, 1479 (2011).CrossRefGoogle Scholar
Moreno, J.C., thesis, CRHEA-Université de Nice-Sophia Antipolis, France (2009).Google Scholar
Le Louarn, A., Vézian, S., Semond, F., Massies, J., J. Cryst. Growth 311, 3278 (2009).CrossRefGoogle Scholar
Dadgar, A., Hempel, T., Bläsing, J., Schulz, O., Fritze, S., Christen, J., Krost, A., Phys. Status Solidi C 8, 1503 (2011).CrossRefGoogle Scholar
Liu, R., Ponce, F.A., Dadgar, A., Krost, A., Appl. Phys. Lett. 83, 860 (2003).CrossRefGoogle Scholar
Radtke, G., Couillard, M., Botton, G.A., Zhu, D., Humphreys, C.J., Appl. Phys. Lett. 97, 251901 (2010).CrossRefGoogle Scholar
Radtke, G., Couillard, M., Botton, G.A., Zhu, D., Humphreys, C.J., Appl. Phys. Lett. 100, 011910 (2012).CrossRefGoogle Scholar
Yacoub, H., Fahle, D., Finken, M., Hahn, H., Blumberg, C., Prost, W., Kalisch, H., Heuken, M., Vescan, A., Semicond. Sci. Technol. 29, 115012 (2014).CrossRefGoogle Scholar
Srivastava, P., Das, J., Visalli, D., Derluyn, J., Van Hove, M., Malinowski, P.E., Marcon, D., Geens, K., Cheng, K., Degroote, S., Leys, M., Germain, M., Decoutere, S., Mertens, R.P., Borghs, G., IEEE Electron Device Lett. 31, 851 (2010).CrossRefGoogle Scholar
Nikishin, S.A., Antipov, V.G., Francoeur, S., Faleev, N.N., Seryogin, G.A., Elyukhin, V.A., Temkin, H., Prokofyeva, T.I., Holtz, M., Konkar, A., Zollner, S., Appl. Phys. Lett. 75, 484 (1999).CrossRefGoogle Scholar
Wen, H.J., Dähne-Prietsch, M., Bauer, A., Cuberes, M.T., Manke, I., Kaindl, G., J. Vac. Sci. Technol. A 13, 2399 (1995).CrossRefGoogle Scholar
Calleja, E., Sánchez-García, M.A., Basak, D., Sánchez, F.J., Calle, F., Youinou, P., Muñoz, E., Serrano, J.J., Blanco, J.M., Villar, C., Laine, T., Oila, J., Saarinen, K., Hautojärvi, P., Molloy, C.H., Somerford, D.J., Harrison, I., Phys. Rev. B: Condens. Matter 58, 1550 (1998).CrossRefGoogle Scholar
Gröger, R., von Blanckenhagen, P., Thin Solid Films 281–282, 73 (1996).CrossRefGoogle Scholar
Saranin, A.A., Kotlyar, V.G., Zotov, A.V., Kasyanova, T.V., Cherevik, M.A., Lifshits, V.G., Surf. Sci. 517, 151 (2002).CrossRefGoogle Scholar
Baron, N., Cordier, Y., Chenot, S., Vennéguès, P., Tottereau, O., Leroux, M., Semond, F., Massies, J., J. Appl. Phys. 105, 033701 (2009).CrossRefGoogle Scholar
Langer, R., Barski, A., Barbier, A., Renaud, G., Leszczynski, M., Grzegory, I., Porowski, S., J. Cryst. Growth 205, 31 (1999).CrossRefGoogle Scholar
Cheng, K., Liang, H., Van Hove, M., Geens, K., De Jaeger, B., Srivastava, P., Kang, X., Favia, P., Bender, H., Decoutere, S., Dekoster, J., del Agua Borniquel, J.I., Jun, S.W., Chung, H., Appl. Phys. Express 5, 011002 (2012).CrossRefGoogle Scholar
Kato, S., Satoh, Y., Sasaki, H., Masayuki, I., Yoshida, S., J. Cryst. Growth 298, 831 (2007).CrossRefGoogle Scholar
Selvaraj, J., Selvaraj, S.L., Egawa, T., Jpn. J. Appl. Phys. 48, 121002 (2009).CrossRefGoogle Scholar
Srivastava, P., Cheng, K., Das, J., Van Hove, M., Leys, M., Marcon, D., Visalli, D., Geens, K., Decoutere, S., Mertens, R.P., Borghs, G., “2 kV Breakdown Voltage GaN–on-Si DHFETs with Sub-micron Thin AlGaN Buffer,” paper presented at CS MANTECH, Boston, MA, 2012.Google Scholar