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Electroless Cu for VLSI

Published online by Cambridge University Press:  29 November 2013

James S.H. Cho ,
Ho-Kyu Kang ,
S. Simon Wong  and
Yosi Shacham-Diamand
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Extract

Interconnection technology is a key factor in the continual advancement of integrated systems. The rapid increase in device density and circuit complexity through scaling demands a similar increase in the interconnection density. Traditionally, this is achieved by reducing the metal pitch as well as gradually increasing the number of interconnection levels. As the width and spacing of interconnections are scaled down to submicron dimensions at the chip level and micron dimensions at the board level, signal delay, crosstalk, electromigration, and stress-induced migration become important concerns.

Cu holds promise as an alternative metallization material to Al alloy due to its low resistivity and ability to reliably carry high-current densities. Cu has a bulk resistivity of 1.68 μΩ-cm, whereas Al has a bulk resistivity of 2.65 μΩ-cm. The only metal with a resistivity lower than Cu is Ag. Since Cu has a melting point and atomic weight both higher than Al, it is expected to have better resistance to electromigration, although properties such as grain structure and resistance to corrosion at high temperatures may also affect electromigration characteristics.

Type
Copper Metallization
Information
MRS Bulletin , Volume 18 , Issue 6 , June 1993 , pp. 31 - 38
Copyright
Copyright © Materials Research Society 1993

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References

1.Gardner, D., Meindl, J., and Saraswat, K., Trans. Elec. Dev., 34 (3) (1987) p. 633.CrossRefGoogle Scholar
2.Pai, P.L. and Ting, C.H., VMIC (1989) p. 258.Google Scholar
3.Paunovic, M., Plating, Vol. 55 (1968) p. 1161.Google Scholar
4.Wong, S.S., Cho, J.S., Kang, H-K., Wong, S.S., and Ting, C.H., Elec. Pack. Mater. Sci. V (1990) p. 347.Google Scholar
5.Cho, J.S.H., Kang, H-K., Beiley, M.A., Wong, S.S., and Ting, C.H., VLSI Tech. Symp. Slide Supplement (1991) p. 37.Google Scholar
6.Shacham-Diamand, Y., Materials for Electronic Packaging, Butterworth-Heinman, 1993, submitted.Google Scholar
7.Wistrom, R.E. and Shacham-Diamand, Y., Proc. Mater. Elect. Pack. (1991).Google Scholar
8.Kang, H-K., Cho, J.S.H., and Wong, S.S., Elec. Dev. Lett., 13 (9) (1992) p. 448.CrossRefGoogle Scholar
9.Ohmi, T., Hoshi, T., Yoshie, Y., Takewaki, T., Otsuki, M., Shibata, T., and Nitta, T., IEDM Tech Dig. (1991) p. 285.Google Scholar
10.Park, C.W. and Vook, R.W., J. Appl. Phys. Lett., 59 (2) (1991) p. 175.CrossRefGoogle Scholar
11.Tao, J., Cheung, N.W., Hu, C., Kang, H-K., Wong, S.S., Elec. Dev. Lett. 13 (8) (1992) p. 433.CrossRefGoogle Scholar
12.Shacham-Diamand, Y., J. Micromech. Microeng. 1 1992, p. 66.CrossRefGoogle Scholar
13.Shacham-Diamand, Y., Quaid, N., Dedhia, A., and Angyl, M., J. Vac. Sci. Technol. 10 (6) (1992) p. 2958.CrossRefGoogle Scholar
14.Kiang, M-H., Lieberman, M.A., Cheung, N.W., Qian, X.Y., Appl. Phys. Lett. 60 (22) (1992) p. 2967.CrossRefGoogle Scholar
15.Cho, J.S.H., Kang, H-K., Beiley, M.A., Wong, S.S., and Ting, C.H., VLSI Tech. Symp. (1991) p. 39.Google Scholar