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Tin Disulfide-Oxide (SnS2-xOx) as n-type Heterojunction Layer Processed by Chemical Bath Technique for Cd Free Fabrication of Compound Semiconductor Thin Film Solar Cells

Published online by Cambridge University Press:  10 July 2018

Omar Asif  and
Alok C. Rastogi
Omar Asif
Affiliation:
Electrical and Computer Engineering Department, Binghamton University, SUNY, Binghamton, NY 13902USA Center for Autonomous Solar Power (CASP), Binghamton University, SUNY, Binghamton, NY 13902USA
Alok C. Rastogi*
Affiliation:
Electrical and Computer Engineering Department, Binghamton University, SUNY, Binghamton, NY 13902USA Center for Autonomous Solar Power (CASP), Binghamton University, SUNY, Binghamton, NY 13902USA
*
*(Email: arastogi@binghamton.edu)
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Abstract

The chemical bath deposition of wide bandgap n-type SnS2 films and role of sulphur precursor in suppression of p-type SnS phase is described. The as-deposited films are highly polycrystalline in hexagonal crystal structure. Inclusion of oxygen in the film phase is shown by the x-ray photoelectron spectroscopy (XPS) and Raman scattering methods which suggests the CBD films are better described as tin disulfide-oxide (SnS2-xOx) x=0.1. A possible mechanism of film formation is presented. Optical analysis showed energy bandgap 2.76 eV for SnS2-xOx film which decreases to 2.62 eV with the inclusion of the secondary SnS phases.

Keywords

photovoltaicthin film
Type
Articles
Information
MRS Advances , Volume 3 , Issue 56: Energy Materials and Technologies , 2018 , pp. 3301 - 3306
Copyright
Copyright © Materials Research Society 2018 

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References

RFERENCES

Gedi, S., Minna Reddy, V.R., Pejjai, B., Jeon, C.-W., Park, C., Ramakrishna Reddy, K.T., Appl. Surf. Sci. 372, 116 (2016).CrossRefGoogle Scholar
Price, L.S., Parkin, I.P., Hardy, A.M.E., Clark, R.J.H., Hibbert, T.G., Molloy, K.C., Chem. Mater. 11, 1792 (1999).CrossRefGoogle Scholar
Thangaraju, B., Kaliannan, P., J. Phys. D: Appl. Phys. 33, 1054 (2000).CrossRefGoogle Scholar
Gu, F., Wang, H., Han, D. and Wang, Z., Sens. Actuators B Chem. 245, 1023 (2017).CrossRefGoogle Scholar
Gedi, S., Reddy, V.R.M., Pejjai, B., et.al., Ceram. Int. 43, 3713 (2017).CrossRefGoogle Scholar
Smith, A.J., Meek, P.E., Liang, W.Y., J. Phys. C: Solid State Phys. 10, 1321 (1977).CrossRefGoogle Scholar
Liu, L.Z., Wu, X.L., Xu, J.Q., Li, T.H., et.al, Appl. Phys. Lett. 100, 121903 (2012).CrossRefGoogle Scholar
Kar, A., Kundu, S., Patra, A., J. Phys Chem. C 115, 118 (2011).CrossRefGoogle Scholar
Lin, Y.-T., Shi, J.-B., Chen, Y.-C., Chen, C-J., Wu, P.-F., Nanoscale Res. Lett 4, 694 (2009).CrossRefGoogle Scholar
Kim, J.H., Shin, D.H., Kwon, H.S., Ahn, B.T., Curr. Appl. Phys. 14, 1803 (2014).CrossRefGoogle Scholar