Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-07-06T06:51:23.106Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress Induced Vacancy Clustering Mechanism of Resistive Switching in Hafnium Oxides

Published online by Cambridge University Press:  01 February 2016

A. Katsman ,
G. Zeevi  and
Y. Yaish
A. Katsman*
Affiliation:
Department of Materials Science and Engineering, Technion, 32000 Haifa, Israel
G. Zeevi
Affiliation:
Department of Electrical Engineering, Technion, 32000 Haifa, Israel
Y. Yaish
Affiliation:
Department of Electrical Engineering, Technion, 32000 Haifa, Israel
*
*(Email: akatsman@technion.ac.il)
Get access

Abstract

Reversible changes in the conductivity of HfO2 dielectric film between high and low resistive states of a metal-insulator-metal memory cell were attributed to the formation of oxygen vacancies and their clustering across the insulator layer. In this study we present an innovative model which includes generation of two-charged states of oxygen vacancies at the anode, their diffusion to the cathode, transformation to one-charged state, and then to neutral vacancies. Vacancy clusters in the insulator layer are built from only neutral vacancies, while the kinetics of the clustering process is controlled by diffusion of mobile one-charged state vacancies. Resistive switching is treated as the formation of critical size vacancy cluster which provides continuous conductive path through the dielectric layer. Good agreement between the experimental data and the theoretical bias and temperature dependences for the delay time was obtained.

Keywords

metal-insulator transitiondiffusiondefects
Type
Articles
Information
MRS Advances , Volume 1 , Issue 5: Electronics and Photonics , 2016 , pp. 349 - 355
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Waser, R., Dittmann, R., Staikov, G., and Szot, K., Adv. Mater. 21, 2632 (2009).Google Scholar
Mannequin, C., Gonon, P., Vall, C., Latu-Romain, L., Bsiesy, A., Grampeix, H., Salaun, A., and Jousseaume, V., J.Appl.Phys. 112, 074103 (2012).Google Scholar
Foster, A. S., Shluger, A. L., and Nieminen, R. M., Phys. Rev. Lett. 89, 225901 (2002).Google Scholar
Capron, N., Broqvist, P., and Pasquarello, A., Appl. Phys. Lett. 91, 192905(2007).Google Scholar
Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M. and Nafría, M., J. Appl. Phys. 110, 124518(2011).Google Scholar
Bersuker, G., Jeon, Y., and Huff, H. R., Microelectronics Reliability 41, 1923 (2001).Google Scholar
Sharma, A. A., Karpov, I. V., Kotlyar, R., Kwon, J., Skowronski, M., Bain, J. A., J. Appl. Phys. 118, 114903 (2015).CrossRefGoogle Scholar
Bradley, S., Bersuker, G. and Shluger, A., J. Phys.: Condens. Matter 27 (2015) 415401 (6pp).Google Scholar
Gonon, P., Mougenot, M., Vallée, C., Jorel, C., Jousseaume, V., Grampeix, H., El Kamel, F., J. Appl. Phys. 107, 074507 (2010).CrossRefGoogle Scholar
McPherson, J., Kim, J. Y., Shanware, A., and Mogul, H., Appl. Phys. Lett. 82, 2121 (2003).Google Scholar
Foster, A. S., Gejo, F. L., Shluger, A. L., Nieminen, R. M., Phys. Rev. B, 65, 174117 (2002).Google Scholar