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SONOS Memories: Advances in Materials and Devices

  • K. Ramkumar (a1), V. Prabhakar (a1), Ali Keshavarzi (a1), Igor Kouznetsov (a1) and Sam Geha (a1)...


Silicon Nitride based charge trap devices have been studied since the 1980s for applications in non-volatile memories. Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) stack as the non-volatile memory gate stack has been the focus since the 1990s. Several enhancements in SONOS layer materials have been invented to reduce the programming voltage and improve the reliability of the SONOS memory. SONOS memories are a widely used class of non-volatile memories today. This paper will review the history of SONOS and highlight the various innovations that have enhanced SONOS memory performance, reliability and low cost of manufacture. Topics covered include various improvements in the SONOS stack such as Band gap engineering, High K–Metal Gate for SONOS, 3D SONOS, SONOS FinFETs (Field Effect Transistor) and embedded SONOS.


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1. White, M. et al. , IEEE Trans. Components, Packaging and Manufacturing A, 20, 190 (1997)
2. Ramkumar, K. et al. , (IEEE Intl. Memory Workshop, 2013) pp. 199
3. Meena, J.S. et al. , Nanoscale Letters, 526 (2014)
4. Kapoor, V.J. et al. J. Appl. Phys, 52, 311 (1981)
5. Lue, H.T. et al. , IEEE Electron Dev Lett, 25, 816 (2004)
6. Honda, K. et al. , (IEEE NVMTS, 2006) pp. 4
7. Buckley, J. et al. ., (IEDM 2006), pp.1.
8. Tan, Y.N. et al. , (IEDM 2004), pp. 889
9. Chang, K.T. et al. , IEEE Electron. Dev. Lett, 253 (1998)
10. Sridhar, et al. Proc. 12th IPFA, 2005, pp.190
11. Bu, J. and White, M.H., IEEE Electron Dev Lett, 22, p.17 (2001)
12. Wu, J. et al. (IEEE IRW, 2006), pp.209
13. Wang, S.Y. et al. , (IEEE IRPS, 2010), pp.951
14. Vianello, E. et al. (IEEE ESSDERC 2008), pp.107
15. Nasyrov, K. A. et al. , IEEE Electron Dev. Lett, 23, p. 336 (2002)
16. Lue, H.T. et al. , (IEDM 2005), pp.547
17. Chen, T.S. et al. , IEEE Electron Dev. Lett, p.205 (2004)
18. Lee, C.H. et al. , (IEEE NVSMW), pp.55
19. Shin, Y. et al. , (IEDM 2006), pp.1
20. Duuren, M.V. et al. , (ICICDT, 2006), pp.1.
21. Molas, G. et al. , (Int. Symp. VLSI Technology Systems and Applications, 2010), pp. 56
22. Van Schaijk, R., et al. , (NVSMW, 2006), pp.
23. Zhang, G. and Woo, W. J., (ISCICT, 2006), pp.781
24. Chin, A. et al. IEEE Proc. 16th IPFA, 2009
25. Muralidhar, R. et al. , (IEDM 2003), pp.601
26. De Salvo, B., et al. , IEEE Trans. Dev and Material Reliability, 377 (2004)
27. Chiang, T.Y. et al. IEEE Trans. Electron Dev. 57, 1895 (2010)
28. Hsu, T.H. et al. , (IEDM, 2007), pp.913.
29. Park, K. et al. , (IEEE SSC 2015), pp.204
30. Lue, H.T. et al. , (Symp. VLSI Technology 2010), pp.131


SONOS Memories: Advances in Materials and Devices

  • K. Ramkumar (a1), V. Prabhakar (a1), Ali Keshavarzi (a1), Igor Kouznetsov (a1) and Sam Geha (a1)...


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