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MOCVD of Monolayer MoS2 using Novel Molybdenum Precursor i-Pr2DADMo(CO)3

  • S. Ishihara (a1) (a2), Y. Hibino (a1), N. Sawamoto (a1), H. Machida (a3), H. Wakabayashi (a4) and A. Ogura (a1)...

Abstract

Metal organic precursor has a sufficiently high vapor pressure at low temperature, contributing high-speed low-temperature MOCVD-MoS2 film formation. We fabricated monolayer MoS2 by 1 step cold-wall MOCVD using di-isopropyl-diazadiene-molybdenum tricarbonyl [i-Pr2DADMo(CO)3] and di-tertiary-butyl disulfide [(t-C4H9)2S2]. These precursors are able to be vaporized using bubbling system and deposited at low temperature. From the XPS investigations, Mo-S bonding peaks were observed and S:Mo ratio was calculated as 2:1, suggesting formation of MoS2. Moreover, molybdenum carbides and nitrogen impurities were not observed which was confirmed by XPS and EDX. From the results of Raman spectroscopy, AFM height distribution, and spectroscopic ellipsometry, it was determined that the film thickness is 0.64 nm which is corresponding to monolayer MoS2, the lateral grain size is approximately 100 nm, and the bandgap energy is 1.8 eV.

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