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Magnetic Defects in Transitional Metal Di-Chalcogenide Semiconducting Layers

Published online by Cambridge University Press:  28 January 2018

L. M. Martinez
Affiliation:
Department of Physics, The University of Texas at El Paso, El Paso, Texas79968, USA.
M. D. Teran
Affiliation:
Department of Physics, The University of Texas at El Paso, El Paso, Texas79968, USA.
R. R. Chianelli
Affiliation:
Department of Physics, The University of Texas at El Paso, El Paso, Texas79968, USA.
S. R. J. Hennadige
Affiliation:
Department of Chemistry, The University of Texas at El Paso, El Paso, Texas79968, USA.
S. R. Singamaneni*
Affiliation:
Department of Physics, The University of Texas at El Paso, El Paso, Texas79968, USA.
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Abstract

In this work, we report on the electron spin resonance (ESR) studies performed on few-layered nanocrystalline (NCs) MoS2, WS2, and TiS2 prepared using hydrothermal and vapor transport methods. From the temperature dependent ESR spectra collected from MoS2 NCs, we have identified adsorbed oxygen species, sulphur vacancies, thio- and oxo-Mo5+ related paramagnetic defect centers. WS2 NCs have exhibited W+3 and oxo-W+5 paramagnetic defect spin species. TiS2 NCs showed defects such as Fe3+ (unwanted), oxygen and sulfur vacancies. This work demonstrates the usage of spin-sensitive spectroscopy such as ESR in unravelling the defects which contain unpaired electron spin centers in layered NCs two-dimensional materials.

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Articles
Copyright
Copyright © Materials Research Society 2018 

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References

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