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A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors

Published online by Cambridge University Press:  10 June 2016

Christopher L. Exstrom ,
Scott A. Darveau ,
Joshua S. Edgar ,
C.J. Curry ,
Michael P. Hanrahan ,
Qinglei Ma ,
Matthew Hilfiker ,
Aaron Ediger  and
Natale J. Ianno
Christopher L. Exstrom*
Affiliation:
Department of Chemistry, University of Nebraska at Kearney, Kearney, NE 68849-1150, U.S.A.
Scott A. Darveau
Affiliation:
Department of Chemistry, University of Nebraska at Kearney, Kearney, NE 68849-1150, U.S.A.
Joshua S. Edgar
Affiliation:
Department of Chemistry, University of Nebraska at Kearney, Kearney, NE 68849-1150, U.S.A.
C.J. Curry
Affiliation:
Department of Chemistry, University of Nebraska at Kearney, Kearney, NE 68849-1150, U.S.A.
Michael P. Hanrahan
Affiliation:
Department of Chemistry, University of Nebraska at Kearney, Kearney, NE 68849-1150, U.S.A.
Qinglei Ma
Affiliation:
Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511, U.S.A.
Matthew Hilfiker
Affiliation:
Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511, U.S.A.
Aaron Ediger
Affiliation:
Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511, U.S.A.
Natale J. Ianno
Affiliation:
Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511, U.S.A.
*
*(Email: exstromc@unk.edu)
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Abstract

WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 °C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 °C for 15 min followed by 550 °C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 °C.

Keywords

thin filmsemiconductingannealing
Type
Articles
Information
MRS Advances , Volume 1 , Issue 41: Energy and Environment , 2016 , pp. 2821 - 2826
Copyright
Copyright © Materials Research Society 2016 

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References

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