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Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

  • Neelu Shrestha (a1), Martyn H. Kibel (a2), Patrick W Leech (a1), Anthony S Holland (a1), Geoffrey K Reeves (a1), Mark C Ridgway (a3) and Phillip Tanner (a4)...


The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.


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