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Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

  • Neelu Shrestha (a1), Martyn H. Kibel (a2), Patrick W Leech (a1), Anthony S Holland (a1), Geoffrey K Reeves (a1), Mark C Ridgway (a3) and Phillip Tanner (a4)...

Abstract

The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.

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1. Wang, Z., Liu, W., Wang, C., J. Electron. Mater. 45(1), 267 (2015).
2. Zhang, Z., Teng, J., Yuan, W.X., Zhang, F.F., Chen, G.H., Appl. Surf. Sci., 255, 6939 (2009).
3. Basak, D., Mahanty, S., Mater. Sci.Eng. B98, 177 (2003).
4. Linchao, H., Huajun, S., Kean, L., Yiyu, W., Yidan, T., Yun, B., Hengyu, X., Yudong, W., Xinyu, L., J. Semicond. 35(7), 07203–1 (2014).
5. Lee, J.W., Angadi, B., Park, H.C., Park, D.H., Choi, J.W., Choi, W.K., Kim, T.W., J. Electrochem. Soc. 154(10), H849 (2007).
6. Touati, F., Takemasa, K., Saji, M., IEEE Trans. Electron Dev. 46(3), 444, (1999).
7. Grodzicki, M., Chrzanowski, J., Mazur, P., Zuber, S., Ciszewski, A., Opt. Appl. 39(4), 765 (2009).
8. Leech, P.W., Holland, A.S., Reeves, G.K., Pan, Y., Ridgway, M.C., Tanner, P., Mater. Lett. 66, 39 (2016).
9. Liu, L. F., Li, C.H., Pisano, A.P., Carraro, C., Maboudia, R., JVSTA A28, 1259 (2010).
10. Wang, L., Dimitrijev, S., Han, J., Iocopi, F., Hold, L., Tanner, P., Harrison, H.B., Thin Solid Films 519 6443 (2011).
11. Pan, Y., Reeves, G. K., Leech, P. W., Holland, A. S., IEEE Trans. Electron Dev. 60, 1202, (2013).
12. Takeda, T., Tomita, A., Matsui, T., Isshiki, T., Mater. Sci. Forum 778-780, 350 (2014).
13. Song, X., Biscarrat, J., Michaud, J-F., Cayrel, F., Zielinksi, M., Chassagne, T., Portail, M., Collard, E, Alquier, D., Nucl. Instr. Meth. Phys. Res. B269, 2020 (2011).

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