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InAs-QDIP hybrid broadband infrared photodetector

Published online by Cambridge University Press:  16 June 2016

Chee H. Tan ,
Ian C. Sandall ,
Xinxin Zhou  and
Sanjay Krishna
Chee H. Tan*
Affiliation:
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
Ian C. Sandall
Affiliation:
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
Xinxin Zhou
Affiliation:
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
Sanjay Krishna
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131-1070, USA.
*
*(Email: c.h.tan-mrsspring2016@scholarone.com)
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Abstract

We demonstrated that an InAs photodiode and a Quantum Dot Infrared Photodiode can be bonded to produce a hybrid broadband infrared photodetector. When cooled to 77 K the InAs photodiode can be used to detect wavelengths from visible to a cutoff wavelength of 3 μm while the Quantum Dot Infrared Photodiode detects wavelengths from 3 to 12 μm. The dark current and spectral response were measured on reference devices and bonded devices. Both sets of devices show similar dark current and spectral response, suggesting that no significant degradation of the devices after the bonding process.

Keywords

infrared (IR) spectroscopysemiconductingsensor
Type
Articles
Information
MRS Advances , Volume 1 , Issue 48: Electronics and Photonics , 2016 , pp. 3301 - 3306
Copyright
Copyright © Materials Research Society 2016 

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References

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