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High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering

Published online by Cambridge University Press:  05 February 2018

Gerard E. Henein ,
Juraj Topolancik  and
Kerry Siebein
Gerard E. Henein*
Affiliation:
Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD20899
Juraj Topolancik
Affiliation:
Roche Sequencing Solutions, 4155 Hopyard Dr., Suite 200, Pleasanton, CA94588
Kerry Siebein
Affiliation:
Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD20899
*
*(Email: gerard.henein@nist.gov)
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Abstract

We have deposited dense and pinhole-free thin films of SiO2, Al2O3 and ITO at room temperature via ion beam sputtering. The SiO2 films were found to be of similar quality as thermal oxide with a resistivity greater than 1015 Ω·cm and breakdown field in excess of 7 MV/cm. The Al2O3 films were part of a Pt- Al2O3-Pt vertical tunnel junction and were kept extremely thin, from 2 nm to 4 nm. The current-voltage characteristics of these junctions indicated a breakdown field in excess of 20 MV/cm, roughly twice that achieved by ALD films. This breakdown voltage was found to be independent of junction area, strongly suggesting the absence of pinholes in the film. The ITO films were 50 nm to 100 nm thick. As deposited, they are fully transparent with an electrical resistivity of 5x10-4 Ω·cm.

Keywords

dielectric propertiesion-beam assisted depositionthin film
Type
Articles
Information
MRS Advances , Volume 3 , Issue 4: Nanomaterials , 2018 , pp. 219 - 224
Copyright
Copyright © Materials Research Society 2018 

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References

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