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Ge-on-Si Photonics for Mid-infrared Sensing Applications

Published online by Cambridge University Press:  23 May 2016

K. Gallacher ,
L. Baldassarre ,
A. Samarelli ,
R. W. Millar ,
A. Ballabio ,
J. Frigerio ,
G. Isella ,
A. Bashir ,
I. MacLaren  and
V. Giliberti
...Show all authors
K. Gallacher
Affiliation:
University of Glasgow, School of Engineering, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, U.K
L. Baldassarre
Affiliation:
Center for Life NanoScience@Sapienza, Sapienza Università di Roma and Istituto Italiano di Tecnologia, Viale Regina Elena 291, I-00161 Rome, Italy
A. Samarelli
Affiliation:
University of Glasgow, School of Engineering, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, U.K
R. W. Millar
Affiliation:
University of Glasgow, School of Engineering, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, U.K
A. Ballabio
Affiliation:
L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Territoriale di Como, Via Anzani 42, I-22100 Como, Italy
J. Frigerio
Affiliation:
L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Territoriale di Como, Via Anzani 42, I-22100 Como, Italy
G. Isella
Affiliation:
L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Territoriale di Como, Via Anzani 42, I-22100 Como, Italy
A. Bashir
Affiliation:
University of Glasgow, School of Physics and Astronomy, Kelvin Building, University Avenue, Glasgow G12 8QQ, U.K..
I. MacLaren
Affiliation:
University of Glasgow, School of Physics and Astronomy, Kelvin Building, University Avenue, Glasgow G12 8QQ, U.K..
V. Giliberti
Affiliation:
Center for Life NanoScience@Sapienza, Sapienza Università di Roma and Istituto Italiano di Tecnologia, Viale Regina Elena 291, I-00161 Rome, Italy
G. Pellegrini
Affiliation:
Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
P. Biagioni
Affiliation:
Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
M. Ortolani
Affiliation:
Center for Life NanoScience@Sapienza, Sapienza Università di Roma and Istituto Italiano di Tecnologia, Viale Regina Elena 291, I-00161 Rome, Italy
D. J. Paul*
Affiliation:
University of Glasgow, School of Engineering, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, U.K
*
*(Email: Douglas.Paul@glasgow.ac.uk)
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Abstract

There is significant interest to develop cheap CMOS compatible sensors that operate in the mid-infrared (MIR). To meet these requirements, Ge-on-Si is proving to be an exciting platform. There is the potential to realize waveguide integrated quantum well infrared photodetectors (QWIPs) based on Ge quantum wells (QWs). Intersubband absorption from p-Ge QWs has been demonstrated in the important atmospheric transmission window of 8-13 μm. An alternative strategy for sensing in the MIR is demonstrated through highly n-type doped Ge plasmonic antennas. These antennas demonstrate vibrational sensing of polydimethylsiloxane (PDMS) spin coated layers at 12.5 μm wavelength. These demonstrate enhanced sensing capabilities due to the localized hot spots of the antenna resonant modes.

Keywords

absorptiondielectric propertiesnanostructure
Type
Articles
Information
MRS Advances , Volume 1 , Issue 48: Electronics and Photonics , 2016 , pp. 3269 - 3279
Copyright
Copyright © Materials Research Society 2016 

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