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GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz

  • P.C. Chao (a1), Kanin Chu (a1), Jose Diaz (a1), Carlton Creamer (a1), Scott Sweetland (a1), Ray Kallaher (a2), Craig McGray (a2), Glen D. Via (a3) and John Blevins (a3)...

Abstract

A new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabricated on a GaN-on-silicon carbide (SiC) epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. Thermal measurements showed that the GaN-on-diamond devices maintained equivalent or lower junction temperatures than their GaN-on-SiC counterparts while delivering more than three-times higher RF power within the same active area. Such results demonstrate that the GaN device transfer process is capable of preserving intrinsic transistor electrical performance while taking advantage of the excellent thermal properties of diamond substrates. Preliminary step-stress and room-temperature, steady-state life testing shows that the low-temperature bonded GaN-on-diamond device has no inherently reliability limiting factor. GaN-on-diamond is ideally suited to wideband electronic warfare (EW) power amplifiers as they are the most thermally challenging due to continuous wave (CW) operation and the reduced power-added efficiency obtained with ultra-wide bandwidth circuit implementations.

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1. Wu, Y.-F., Moore, M., Saxler, A., Wisleder, T., and Parikh, P., “40-W/mm double field-plated GaN HEMTs,” Proc. 64th Device Res. Conf., State College, PA, USA, 151 (2006).
2. Wasserbauer, J., Falli, F., Babic, D., Francis, D. and Ejeckam, F., “Diamond cools high-power transistors,” Compound Semiconductor, 25 (2007).
3. Chao, P.C., Chu, K., and Creamer, C., “A New High-power GaN-on-diamond HEMT with low-temperature bonded substrate technology,” Int. Conf. on Compound Semiconductor Manuf. Tech., New Orleans, LA, 179 (2013).
4. Cho, J., Chao, P.C., Asheghi, M. and Goodson, K., “Phonon conduction normal to polysilicon films on diamond,” presented at ASME 4th Micro/Nanoscale Heat & Mass Transfer (MNHMT) International Conf., Hong Kong, China (2013).
5. Dumka, D.C., Lee, C., Tserng, H.Q., Saunier, P. and Kumar, R., “AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz,” Electron Lett., 40, 1023 (2004).

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GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz

  • P.C. Chao (a1), Kanin Chu (a1), Jose Diaz (a1), Carlton Creamer (a1), Scott Sweetland (a1), Ray Kallaher (a2), Craig McGray (a2), Glen D. Via (a3) and John Blevins (a3)...

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