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Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates

  • Fuminori Mitsuhashi (a1), Masaya Okada (a1), Yasunori Tateno (a2), Takashi Nakabayashi (a2), Masaki Ueno (a1), Hiroyuki Nagasawa (a3), Hirokazu Fukidome (a3) and Maki Suemitsu (a3)...

Abstract

A novel method to fabricate uniform epitaxial graphene on C-face SiC substrates was investigated. Graphene was grown on the C-face 6H-SiC substrates with a sputtered SiC film by annealing temperatures ranging from 1400 to 1900 °C under an Ar ambient. The fractional area of the graphene having the layer number of two was about 95% in a 75×75 μm square by a Raman mapping and a low energy electron microscopy. Graphene on the C-face SiC fabricated by this method is quite uniform compared to that made by a conventional method without the sputtered SiC films and is thus suitable for high frequency analog devices.

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Keywords

Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates

  • Fuminori Mitsuhashi (a1), Masaya Okada (a1), Yasunori Tateno (a2), Takashi Nakabayashi (a2), Masaki Ueno (a1), Hiroyuki Nagasawa (a3), Hirokazu Fukidome (a3) and Maki Suemitsu (a3)...

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